Artikel dengan mandat akses publik - Devendra SadanaPelajari lebih lanjut
Tersedia di suatu tempat: 4
Layer transfer of bulk gallium nitride by controlled spalling
SW Bedell, P Lauro, JA Ott, K Fogel, DK Sadana
Journal of Applied Physics 122 (2), 2017
Mandat: US Department of Energy
GaN devices on a 200 mm Si platform targeting heterogeneous integration
KT Lee, C Bayram, D Piedra, E Sprogis, H Deligianni, B Krishnan, ...
IEEE Electron Device Letters 38 (8), 1094-1096, 2017
Mandat: US Department of Defense
Heatpulse annealing of ion-implanted silicon: structural characterization by transmission electron microscopy
DK Sadana, SC Shatas, A Gat
Microscopy of Semiconducting Materials 1983, Third Oxford Conference on …, 2020
Mandat: US Department of Energy
Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si (1 1 1) substrate
J Perozek, HP Lee, B Krishnan, A Paranjpe, KB Reuter, DK Sadana, ...
Journal of Physics D: Applied Physics 50 (5), 055103, 2017
Mandat: US Department of Defense
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