Jared M Johnson

Dikutip oleh

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Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityEmail yang diverifikasi di osu.edu
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityEmail yang diverifikasi di osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityEmail yang diverifikasi di ece.osu.edu
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUEmail yang diverifikasi di osu.edu
Yuewei ZhangUCSBEmail yang diverifikasi di ucsb.edu
Zixuan FengThe Ohio State UniversityEmail yang diverifikasi di osu.edu
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellEmail yang diverifikasi di uml.edu
Sriram KrishnamoorthyUniversity of California, Santa BarbaraEmail yang diverifikasi di ucsb.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Fatih AkyolYıldız Teknik ÜniversitesiEmail yang diverifikasi di yildiz.edu.tr
Menglin Zhu [ORCID: 0000-0001-683...Postdoctoral Researcher, MITEmail yang diverifikasi di mit.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Soohyun ImThe State University of New York at BuffaloEmail yang diverifikasi di buffalo.edu
Choong Hee Lee (Epitaxy Research S...QorvoEmail yang diverifikasi di qorvo.com
Md Rezaul KarimIntel CorporationEmail yang diverifikasi di osu.edu

Ikuti

Jared M Johnson

The Ohio State University

Email yang diverifikasi di thermofisher.com

STEM Ga2O3


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017	593	2017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	412	2018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	333	2017
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	170	2019
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019	149	2019
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	144	2018
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	137	2020
Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015	103	2015
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018	92	2018
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ... Journal of Applied Physics 121 (9), 2017	88	2017
High current density 2D/3D MoS2/GaN Esaki tunnel diodes S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ... Applied Physics Letters 109 (18), 2016	82	2016
MOCVD Epitaxy of Ultrawide Bandgap beta-(AlxGa1-x)(2) O-3 with High-Al Composition on (100) beta-Ga2O3 Substrates AFM Bhuiyan, A Uddin, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	71	2020
Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy S Im, Z Chen, JM Johnson, P Zhao, GH Yoo, ES Park, Y Wang, DA Muller, ... Ultramicroscopy 195, 189-193, 2018	69	2018
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan Applied Physics Letters 108 (13), 2016	63	2016
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020	61	2020
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021	56	2021
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020	56	2020
First-in-human phase 1 dose escalation and expansion of a novel combination, anti-CSF-1 receptor (cabiralizumab) plus anti-PD-1 (nivolumab), in patients with advanced solid tumors Z Wainberg, S Piha-Paul, J Luke, E Kim, J Thompson, CD Britten, ... J Immunother Cancer 5 (89), 10.1186, 2017	55	2017
MOCVD Epitaxy of Ultrawide Bandgap β-(Al_xGa_1–x)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	54	2020
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ... Applied Physics Letters 111 (5), 2017	54	2017

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