| Electromechanical piezoresistive sensing in suspended graphene membranes AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ... Nano letters 13 (7), 3237-3242, 2013 | 451 | 2013 |
| Nanoscale MOS transistors: semi-classical transport and applications D Esseni, P Palestri, L Selmi Cambridge University Press, 2011 | 277 | 2011 |
| Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain P Palestri, D Esseni, S Eminente, C Fiegna, E Sangiorgi, L Selmi IEEE Transactions on Electron Devices 52 (12), 2727-2735, 2005 | 191 | 2005 |
| Piezoresistive properties of suspended graphene membranes under uniaxial and biaxial strain in nanoelectromechanical pressure sensors AD Smith, F Niklaus, A Paussa, S Schröder, AC Fischer, M Sterner, ... ACS nano 10 (11), 9879-9886, 2016 | 154 | 2016 |
| A TCAD-based methodology to model the site-binding charge at ISFET/electrolyte interfaces A Bandiziol, P Palestri, F Pittino, D Esseni, L Selmi IEEE Transactions on Electron Devices 62 (10), 3379-3386, 2015 | 114 | 2015 |
| Multisubband Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs L Lucci, P Palestri, D Esseni, L Bergagnini, L Selmi IEEE transactions on electron devices 54 (5), 1156-1164, 2007 | 113 | 2007 |
| Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann transport equation M Lenzi, P Palestri, E Gnani, S Reggiani, A Gnudi, D Esseni, L Selmi, ... IEEE Transactions on Electron Devices 55 (8), 2086-2096, 2008 | 111 | 2008 |
| A review of selected topics in physics based modeling for tunnel field-effect transistors D Esseni, M Pala, P Palestri, C Alper, T Rollo Semiconductor Science and Technology 32 (8), 083005, 2017 | 97 | 2017 |
| Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ... IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015 | 91 | 2015 |
| Modeling, design and characterization of a new low-jitter analog dual tuning LC-VCO PLL architecture R Nonis, N Da Dalt, P Palestri, L Selmi IEEE Journal of Solid-State Circuits 40 (6), 1303-1309, 2005 | 88 | 2005 |
| Digital and analog TFET circuits: Design and benchmark S Strangio, F Settino, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi Solid-State Electronics 146, 50-65, 2018 | 81 | 2018 |
| Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015 | 80 | 2015 |
| A design methodology for MOS current-mode logic frequency dividers R Nonis, E Palumbo, P Palestri, L Selmi IEEE Transactions on Circuits and Systems I: Regular Papers 54 (2), 245-254, 2007 | 78 | 2007 |
| Understanding quasi-ballistic transport in nano-MOSFETs: Part II-Technology scaling along the ITRS S Eminente, D Esseni, P Palestri, C Fiegna, L Selmi, E Sangiorgi IEEE transactions on electron devices 52 (12), 2736-2743, 2005 | 74 | 2005 |
| Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits F Settino, M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni, L Selmi IEEE Transactions on Electron Devices 64 (6), 2736-2743, 2017 | 71 | 2017 |
| Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices D Esseni, P Palestri Physical Review B—Condensed Matter and Materials Physics 72 (16), 165342, 2005 | 71 | 2005 |
| An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation P Palestri, S Eminente, D Esseni, C Fiegna, E Sangiorgi, L Selmi Solid-state electronics 49 (5), 727-732, 2005 | 71 | 2005 |
| Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates A Pacelli, P Palestri, M Mastrapasqua IEEE Transactions on Electron Devices 49 (6), 1027-1033, 2002 | 70 | 2002 |
| Closed-and open-boundary models for gate-current calculation in n-MOSFETs A Dalla Serra, A Abramo, P Palestri, L Selmi, F Widdershoven IEEE Transactions on Electron Devices 48 (8), 1811-1815, 2001 | 70 | 2001 |
| On the apparent mobility in nanometric n-MOSFETs M Zilli, D Esseni, P Palestri, L Selmi IEEE Electron Device Letters 28 (11), 1036-1039, 2007 | 67 | 2007 |
Francesco DriussiUniversità degli Studi di UdineEmail yang diverifikasi di uniud.it
