Ikuti
Biju K. P.
Biju K. P.
Assistant Professor, Dept. of Physics Govt. Arts and Science College , Calicut
Email yang diverifikasi di gasckkd.ac.in - Beranda
Judul
Dikutip oleh
Dikutip oleh
Tahun
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ...
Nanotechnology 22 (25), 254023, 2011
3222011
TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ...
Journal of Applied Physics 109 (3), 2011
1772011
Diode-less nano-scale ZrOx/HfOxRRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications
J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ...
2010 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2010
1352010
Multibit Operation of-Based ReRAM by Schottky Barrier Height Engineering
J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang
IEEE Electron Device Letters 32 (4), 476-478, 2011
1162011
Effect of crystallization on humidity sensing properties of sol–gel derived nanocrystalline TiO2 thin films
KP Biju, MK Jain
Thin Solid Films 516 (8), 2175-2180, 2008
1132008
Sol–gel derived TiO2: ZrO2 multilayer thin films for humidity sensing application
KP Biju, MK Jain
Sensors and Actuators B: Chemical 128 (2), 407-413, 2008
1062008
Resistive switching characteristics and mechanism of thermally grown WOx thin films
KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang
Journal of Applied Physics 110 (6), 2011
972011
Effect of Scaling-Based RRAMs on Their Resistive Switching Characteristics
S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ...
IEEE electron device letters 32 (5), 671-673, 2011
652011
Surface modification of sol gel TiO2 surface with sputtered metallic silver for Sun light photocatalytic activity: Initial studies
A Subrahmanyam, KP Biju, P Rajesh, KJ Kumar, MR Kiran
Solar Energy Materials and Solar Cells 101, 241-248, 2012
582012
Low temperature solution-processed graphene oxide/Pr0. 7Ca0. 3MnO3 based resistive-memory device
I Kim, M Siddik, J Shin, KP Biju, S Jung, H Hwang
Applied Physics Letters 99 (4), 2011
562011
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 devices
X Liu, KP Biju, EM Bourim, S Park, W Lee, J Shin, H Hwang
Solid state communications 150 (45-46), 2231-2235, 2010
522010
Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices
KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang
Journal of Physics D: Applied Physics 43 (49), 495104, 2010
522010
Fast Diffusion of Very Long Chain Saturated Fatty Acids across a Bilayer Membrane and Their Rapid Extraction by Cyclodextrins
BK Pillai, R Jasuja, JR Simard, JA Hamilton
Journal of Biological Chemistry 284 (48), 33296-33304, 2009
522009
Effect of post-annealing on the band gap of sol–gel prepared nano-crystalline Mg x Zn1−x O (0.0 ≤ x ≤ 0.3) thin films
SR Meher, KP Biju, MK Jain
Journal of sol-gel science and technology 52, 228-234, 2009
412009
Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films
KP Biju, X Liu, S Kim, S Jung, J Park, H Hwang
physica status solidi (RRL)–Rapid Research Letters 5 (3), 89-91, 2011
402011
Effect of polyethylene glycol additive in sol on the humidity sensing properties of a TiO2 thin film
KP Biju, MK Jain
Measurement Science and Technology 18 (9), 2991, 2007
352007
Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
KP Biju, X Liu, J Shin, I Kim, S Jung, M Siddik, J Lee, A Ignatiev, H Hwang
Current Applied Physics 11 (4), S102-S106, 2011
302011
Parallel memristive filaments model applicable to bipolar and filamentary resistive switching
X Liu, KP Biju, J Lee, J Park, S Kim, S Park, J Shin, SM Sadaf, H Hwang
Applied Physics Letters 99 (11), 2011
292011
Improved resistive switching properties in Pt/Pr0. 7Ca0. 3MnO3/Y2O3-stabilized ZrO2/W via-hole structures
X Liu, KP Biju, S Park, I Kim, M Siddik, S Sadaf, H Hwang
Current Applied Physics 11 (2), e58-e61, 2011
272011
Improvement of resistive switching uniformity by introducing a thin NbOx interface layer
X Liu, SM Sadaf, S Kim, KP Biju, X Cao, M Son, SH Choudhury, GY Jung, ...
ECS Solid State Letters 1 (5), Q35, 2012
222012
Sistem tidak dapat melakukan operasi ini. Coba lagi nanti.
Artikel 1–20