Artikel dengan mandat akses publik - Zhihong LiuPelajari lebih lanjut
Tidak tersedia di mana pun: 50
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Mandat: US Department of Energy, US Department of Defense
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC
P Dong, J Zhang, Q Yan, Z Liu, P Ma, H Zhou, Y Hao
IEEE Electron Device Letters 43 (5), 765-768, 2022
Mandat: National Natural Science Foundation of China
High-Performance Vertical -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination
H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ...
IEEE Electron Device Letters 40 (11), 1788-1791, 2019
Mandat: National Natural Science Foundation of China
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ...
IEEE Electron Device Letters 42 (4), 485-488, 2021
Mandat: National Natural Science Foundation of China
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
Q Yan, H Gong, J Zhang, J Ye, H Zhou, Z Liu, S Xu, C Wang, Z Hu, ...
Applied Physics Letters 118 (12), 122102, 2021
Mandat: National Natural Science Foundation of China
InAlN/GaN HEMTs on Si With High of 250 GHz
W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
Mandat: US Department of Defense, National Research Foundation, Singapore
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
Mandat: US Department of Energy
Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination
Q Yan, H Gong, H Zhou, J Zhang, J Ye, Z Liu, C Wang, X Zheng, R Zhang, ...
Applied Physics Letters 120 (9), 092106, 2022
Mandat: National Natural Science Foundation of China
Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz
H Xie, Z Liu, Y Gao, K Ranjan, KE Lee, GI Ng
Applied Physics Express 12 (12), 126506, 2019
Mandat: National Research Foundation, Singapore
Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved and Linearity
W Xing, Z Liu, H Qiu, GI Ng, T Palacios
IEEE Electron Device Letters 38 (5), 619-622, 2017
Mandat: US Department of Defense, National Research Foundation, Singapore
CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V
H Xie, Z Liu, Y Gao, K Ranjan, KE Lee, GI Ng
Applied Physics Express 13 (2), 026503, 2020
Mandat: National Research Foundation, Singapore
Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity
W Xing, Z Liu, K Ranjan, GI Ng, T Palacios
IEEE Electron Device Letters 39 (7), 947-950, 2018
Mandat: US Department of Defense, National Research Foundation, Singapore
High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage
H Du, Z Liu, L Hao, H Su, T Zhang, W Zhang, J Zhang, Y Hao
IEEE Electron Device Letters 43 (5), 705-708, 2022
Mandat: National Natural Science Foundation of China
SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design
EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ...
ECS Transactions 75 (8), 439-446, 2016
Mandat: National Research Foundation, Singapore
Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode With Improved On-Current and Ideality Factor
Y Zhang, J Zhang, Z Liu, S Xu, K Cheng, J Ning, C Zhang, L Zhang, P Ma, ...
IEEE Electron Device Letters 41 (3), 457-460, 2020
Mandat: National Natural Science Foundation of China
GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs
H Xie, Z Liu, W Hu, Z Zhong, K Lee, YX Guo, GI Ng
IEEE Microwave and Wireless Components Letters, 2020
Mandat: National Research Foundation, Singapore
Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures
J Chen, Z Liu, H Wang, X Song, Z Bian, X Duan, S Zhao, J Ning, J Zhang, ...
Applied Physics Express 14 (10), 104002, 2021
Mandat: National Natural Science Foundation of China
Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG AlₓGa₁₋ ₓN Channel
S Liu, J Zhang, S Zhao, L Shu, X Song, X Qin, Y Wu, W Zhang, T Li, ...
IEEE Transactions on Electron Devices, 2022
Mandat: National Natural Science Foundation of China
1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire …
HP Zhang, JS Xue, ZP Sun, LX Li, JJ Yao, F Liu, XY Yang, GL Wu, ZM Li, ...
Applied Physics Letters 119 (15), 153506, 2021
Mandat: National Natural Science Foundation of China
Au-Free Al₀. ₄Ga₀. ₆N/Al₀. ₁Ga₀. ₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV
Y Wu, W Zhang, J Zhang, S Zhao, J Luo, X Tan, W Mao, C Zhang, ...
IEEE Transactions on Electron Devices 68 (9), 4543-4549, 2021
Mandat: National Natural Science Foundation of China
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