| Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition ER Glaser, TA Kennedy, K Doverspike, LB Rowland, DK Gaskill, ... Physical Review B 51 (19), 13326, 1995 | 394 | 1995 |
| Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ... Applied physics letters 66 (10), 1252-1254, 1995 | 380 | 1995 |
| SiC materials-progress, status, and potential roadblocks AR Powell, LB Rowland Proceedings of the IEEE 90 (6), 942-955, 2002 | 312 | 2002 |
| Dislocation conversion in 4H silicon carbide epitaxy S Ha, P Mieszkowski, M Skowronski, LB Rowland Journal of Crystal Growth 244 (3-4), 257-266, 2002 | 306 | 2002 |
| Temperature dependence of Fowler-Nordheim current in 6H-and 4H-SiC MOS capacitors AK Agarwal, S Seshadri, LB Rowland IEEE Electron Device Letters 18 (12), 592-594, 1997 | 291 | 1997 |
| Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ... Applied physics letters 67 (16), 2284-2286, 1995 | 286 | 1995 |
| Microwave performance of GaN MESFETS SC Binari, LB Rowland, W Kruppa, G Kelner, K Doverspike, DK Gaskill Electronics letters 30 (15), 1248-1249, 1994 | 257 | 1994 |
| Gallium nitride crystals and wafers and method of making MP D'evelyn, DS Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ... US Patent 7,078,731, 2006 | 256 | 2006 |
| H, He, and N implant isolation of n‐type GaN SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, ... Journal of applied physics 78 (5), 3008-3011, 1995 | 202 | 1995 |
| Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors AP Zhang, LB Rowland, EB Kaminsky, V Tilak, JC Grande, J Teetsov, ... Journal of electronic materials 32, 388-394, 2003 | 198 | 2003 |
| Development of a silicon carbide radiation detector FH Ruddy, AR Dulloo, JG Seidel, S Seshadri, LB Rowland IEEE Transactions on Nuclear Science 45 (3), 536-541, 1998 | 187 | 1998 |
| 1.1 kv 4h-sic power umosfets AK Agarwal, JB Casady, LB Rowland, WF Valek, MH White, CD Brandt IEEE Electron Device Letters 18 (12), 586-588, 1997 | 175 | 1997 |
| Electrical characterisation of Ti Schottky barriers on n-type GaN SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, DK Gaskill Electronics Letters 30 (11), 909-911, 1994 | 173 | 1994 |
| Demonstration of an SiC neutron detector for high-radiation environments S Seshadri, AR Dulloo, FH Ruddy, JG Seidel, LB Rowland IEEE Transactions on Electron Devices 46 (3), 567-571, 1999 | 157 | 1999 |
| Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes XA Cao, SF LeBoeuf, LB Rowland, CH Yan, H Liu Applied Physics Letters 82 (21), 3614-3616, 2003 | 152 | 2003 |
| Gallium nitride crystal and method of making same MP D'evelyn, DS Park, S LeBoeuf, L Rowland, K Narang, H Hong, ... US Patent 7,098,487, 2006 | 137 | 2006 |
| The role of excess silicon and in situ etching on 4HSiC and 6HSiC epitaxial layer morphology AA Burk Jr, LB Rowland Journal of crystal growth 167 (3-4), 586-595, 1996 | 137 | 1996 |
| Gallium nitride crystals and wafers and method of making MP D'evelyn, D Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ... US Patent 7,786,503, 2010 | 123 | 2010 |
| Observation of nanopipes in α-GaN crystals W Qian, M Skowronski, K Doverspike, LB Rowland, DK Gaskill Journal of crystal growth 151 (3-4), 396-400, 1995 | 105 | 1995 |
| Method for reducing defect concentrations in crystals MP D'evelyn, TR Anthony, SD Arthur, LM Levinson, JW Lucek, ... US Patent 7,175,704, 2007 | 101 | 2007 |