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Nanoscale 7 (29), 12343-12350, 2015
393 2015 Comparative study of room‐temperature ferromagnetism in Cu‐doped ZnO nanowires enhanced by structural inhomogeneity GZ Xing, JB Yi, JG Tao, T Liu, LM Wong, Z Zhang, GP Li, SJ Wang, J Ding, ...
Advanced Materials 20 (18), 3521-3527, 2008
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Nanoscale 7 (6), 2497-2503, 2015
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Nano letters 11 (8), 3232-3238, 2011
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The Journal of Physical Chemistry C 116 (22), 11956-11963, 2012
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The Journal of Physical Chemistry C 112 (26), 9579-9585, 2008
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Physical Review B 95 (23), 235434, 2017
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Journal of Materials Chemistry A 5 (32), 16748-16756, 2017
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ACS applied materials & interfaces 9 (7), 5959-5967, 2017
227 2017 Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering HB Nie, SY Xu, SJ Wang, LP You, Z Yang, CK Ong, J Li, TYF Liew
Applied Physics A 73, 229-236, 2001
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Nano Energy 68, 104304, 2020
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Advanced Materials Interfaces 6 (1), 1801160, 2019
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The Journal of Physical Chemistry C 111 (47), 17500-17505, 2007
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Electrochimica Acta 269, 55-61, 2018
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Nature Physics 15 (4), 347-351, 2019
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Advanced Materials 34 (1), 2102703, 2022
155 2022 Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment B Tang, ZG Yu, L Huang, J Chai, SL Wong, J Deng, W Yang, H Gong, ...
ACS nano 12 (3), 2506-2513, 2018
136 2018 Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric P Xia, X Feng, RJ Ng, S Wang, D Chi, C Li, Z He, X Liu, KW Ang
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129 2015 
Lai Mun WongInstitute of Materials Research and Engineering (IMRE)Email yang diverifikasi di imre.a-star.edu.sg
