M. Hong

Dikutip oleh

	Semua	Sejak 2020
Kutipan	19550	2407
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J. KwoNational Tsing Hua University, Department of physics; Bell Labs, Stanford UniversityEmail yang diverifikasi di phys.nthu.edu.tw
Mao-Lin HuangTaiwan Semiconductor Manufacturing CompanyEmail yang diverifikasi di oz.nthu.edu.tw
T. D. LinNational Tsing Hua UniversityEmail yang diverifikasi di mx.nthu.edu.tw
Fan RenUniversity of Florida, Bell Lab, AT&TEmail yang diverifikasi di che.ufl.edu
Chao-Kai ChengNational Taiwan UniversityEmail yang diverifikasi di ntu.edu.tw
Yen-Hsun (Glen) LinDepartment of Physics, National Tsing Hua University (NTHU)Email yang diverifikasi di phys.nthu.edu.tw
Hsien-Wen WanPhD student, National Taiwan UniversityEmail yang diverifikasi di ntu.edu.tw
Young-Kai ChenII-VI Inc., Cornell University/Princeton UniversityEmail yang diverifikasi di cornell.edu
R OpilaUniversity of DelawareEmail yang diverifikasi di udel.edu
Yi-Ting Cheng國立台灣大學Email yang diverifikasi di ntu.edu.tw
Chi-Nan Wu 巫啓男Max Planck Institute for Chemical Physics of SolidsEmail yang diverifikasi di phys.nthu.edu.tw
Adrian TungAnalog Engineer at IntelEmail yang diverifikasi di cornell.edu
Yu-Ting FanchiangNational Taiwan UniversityEmail yang diverifikasi di ntu.edu.tw
E. Fred SchubertRensselaer Polytechnic InstituteEmail yang diverifikasi di rpi.edu
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Lawrence Boyu YoungNational Taiwan UniversityEmail yang diverifikasi di ntu.edu.tw
ChoquetteUniversity of IllinoisEmail yang diverifikasi di illinois.edu
Yu-Hwa LoUCSDEmail yang diverifikasi di ucsd.edu
Leonard FeldmanProfessor of Physics and Materials ScienceEmail yang diverifikasi di rutgers.edu
Ko-Hsuan Mandy ChenNational Tsing Hua University, Department of physicsEmail yang diverifikasi di m105.nthu.edu.tw

Ikuti

M. Hong

Natl Taiwan Univ. Bell Laboratories

Email yang diverifikasi di phys.ntu.edu.tw

Hetero-interfaces – science and technology molecular beam epitaxy atomic layer deposition nano-electronics spintronics


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Ga₂O₃ films for electronic and optoelectronic applications M Passlack, EF Schubert, WS Hobson, M Hong, N Moriya, SNG Chu, ... Journal of applied physics 77 (2), 686-693, 1995	529	1995
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation M Hong, J Kwo, AR Kortan, JP Mannaerts, AM Sergent Science 283 (5409), 1897-1900, 1999	524	1999
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ... Applied Physics Letters 87 (25), 2005	487	2005
Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice CF Majkrzak, JW Cable, J Kwo, M Hong, DB McWhan, Y Yafet, ... Physical review letters 56 (25), 2700, 1986	467	1986
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	421	2003
Crystal structure of the 80 K superconductor YBa₂Cu₄O₈ P Marsh, RM Fleming, ML Mandich, AM DeSantolo, J Kwo, M Hong, ... Nature 334 (6178), 141-143, 1988	402	1988
Properties of high κ gate dielectrics and for Si J Kwo, M Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila Jr, ... Journal of Applied Physics 89 (7), 3920-3927, 2001	400	2001
High ε gate dielectrics and for silicon J Kwo, M Hong, AR Kortan, KT Queeney, YJ Chabal, JP Mannaerts, ... Applied Physics Letters 77 (1), 130-132, 2000	394	2000
Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y₁Ba₂Cu₃O_x JW Ekin, AI Braginski, AJ Panson, MA Janocko, DW Capone, NJ Zaluzec, ... Journal of applied physics 62 (12), 4821-4828, 1987	351	1987
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ... IEEE Electron Device Letters 24 (4), 209-211, 2003	342	2003
Optical properties of gallium oxide thin films M Rebien, W Henrion, M Hong, JP Mannaerts, M Fleischer Applied physics letters 81 (2), 250-252, 2002	302	2002
Quasistatic and high frequency capacitance–voltage characterization of Ga₂O₃–GaAs structures fabricated by in situ molecular beam epitaxy M Passlack, M Hong, JP Mannaerts Applied physics letters 68 (8), 1099-1101, 1996	297	1996
Effect of temperature on metal–oxide–semiconductor field-effect transistors F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ... Applied Physics Letters 73 (26), 3893-3895, 1998	282	1998
Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7− x films prepared by molecular-beam epitaxy J Kwo, TC Hsieh, RM Fleming, M Hong, SH Liou, BA Davidson, ... Physical Review B 36 (7), 4039, 1987	282	1987
III–V compound semiconductor transistors—from planar to nanowire structures H Riel, LE Wernersson, M Hong, JA Del Alamo Mrs Bulletin 39 (8), 668-677, 2014	276	2014
Energy-band parameters of atomic-layer-deposition Al2O3∕ InGaAs heterostructure ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong Applied physics letters 89 (1), 2006	246	2006
Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices J Kwo, EM Gyorgy, DB McWhan, M Hong, FJ DiSalvo, C Vettier, JE Bower Physical review letters 55 (13), 1402, 1985	244	1985
Magnetic rare earth superlattices CF Majkrzak, J Kwo, M Hong, Y Yafet, D Gibbs, CL Chien, J Bohr Advances in Physics 40 (2), 99-189, 1991	238	1991
Dielectric properties of electron‐beam deposited Ga₂O₃ films M Passlack, NEJ Hunt, EF Schubert, GJ Zydzik, M Hong, JP Mannaerts, ... Applied physics letters 64 (20), 2715-2717, 1994	234	1994
Superconducting Y‐Ba‐Cu‐O oxide films by sputtering M Hong, SH Liou, J Kwo, BA Davidson Applied physics letters 51 (9), 694-696, 1987	224	1987

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