| Triboelectric nanogenerator: Structure, mechanism, and applications WG Kim, DW Kim, IW Tcho, JK Kim, MS Kim, YK Choi ACS nano 15 (1), 258-287, 2021 | 640 | 2021 |
| A compact model of quantum electron density at the subthreshold region for double-gate junctionless transistors JP Duarte, MS Kim, SJ Choi, YK Choi IEEE Transactions on Electron Devices 59 (4), 1008-1012, 2012 | 100 | 2012 |
| Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET JK Han, M Seo, WK Kim, MS Kim, SY Kim, MS Kim, GJ Yun, GB Lee, ... IEEE Electron Device Letters 41 (2), 208-211, 2019 | 89 | 2019 |
| Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory MS Kim, Y Hwan Hwang, S Kim, Z Guo, DI Moon, JM Choi, ML Seol, ... Applied Physics Letters 101 (24), 2012 | 84 | 2012 |
| Sensitive and selective electrochemical detection of dopamine using an electrode modified with carboxylated carbonaceous spheres Z Guo, ML Seol, MS Kim, JH Ahn, YK Choi, JH Liu, XJ Huang Analyst 138 (9), 2683-2690, 2013 | 80 | 2013 |
| Functionalized porous Si nanowires for selective and simultaneous electrochemical detection of Cd (II) and Pb (II) ions Z Guo, ML Seol, C Gao, MS Kim, JH Ahn, YK Choi, XJ Huang Electrochimica Acta 211, 998-1005, 2016 | 61 | 2016 |
| Hollow CuO nanospheres uniformly anchored on porous Si nanowires: preparation and their potential use as electrochemical sensors Z Guo, ML Seol, MS Kim, JH Ahn, YK Choi, JH Liu, XJ Huang Nanoscale 4 (23), 7525-7531, 2012 | 60 | 2012 |
| Investigation of physically unclonable functions using flash memory for integrated circuit authentication MS Kim, DI Moon, SK Yoo, SH Lee, YK Choi IEEE Transactions on Nanotechnology 14 (2), 384-389, 2015 | 48 | 2015 |
| Method and apparatus for controlling operation of flash memory MS Kim, YOO Sang-Kyung, S Lee US Patent 9,324,436, 2016 | 38 | 2016 |
| Apparatus and method for preventing error in physically unclonable function MS Kim, YOO Sang-Kyung, S Ryu, BS Lee, LEE Rae, K JunKi, S Lee US Patent 9,448,874, 2016 | 23 | 2016 |
| Triboelectric nanogenerator: structure, mechanism, and applications, ACS Nano 15 (2021) 258–287 WG Kim, DW Kim, IW Tcho, JK Kim, MS Kim, YK Choi | 22 | |
| Highly endurable floating body cell memory: Vertical biristor DI Moon, SJ Choi, JY Kim, SW Ko, MS Kim, JS Oh, GS Lee, MH Kang, ... 2012 International Electron Devices Meeting, 31.7. 1-31.7. 4, 2012 | 19 | 2012 |
| Random number generator with a chaotic wind-driven triboelectric energy harvester MS Kim, IW Tcho, SJ Park, YK Choi Nano Energy 78, 105275, 2020 | 16 | 2020 |
| A poly‐crystalline silicon nanowire transistor with independently controlled double‐gate for physically unclonable function by multi‐states and self‐destruction JM Yu, GJ Yun, MS Kim, JK Han, DJ Kim, YK Choi Advanced Electronic Materials 7 (5), 2000989, 2021 | 14 | 2021 |
| Strategy to enhance entropy of random numbers in a wind-driven triboelectric random number generator MS Kim, IW Tcho, YK Choi Nano Energy 89, 106359, 2021 | 10 | 2021 |
| Transfer of functional memory devices to any substrate JM Choi, MS Kim, ML Seol, YK Choi physica status solidi (RRL)–Rapid Research Letters 7 (5), 326-331, 2013 | 10 | 2013 |
| Low-power true random number generator based on randomly distributed carbon nanotube networks S Kim, MS Kim, Y Lee, HD Kim, YK Choi, SJ Choi IEEE Access 9, 91341-91346, 2021 | 9 | 2021 |
| Multi-functional universal device using a band-engineered vertical structure DI Moon, JS Oh, SJ Choi, S Kim, JY Kim, MS Kim, YS Kim, MH Kang, ... 2011 International Electron Devices Meeting, 24.6. 1-24.6. 4, 2011 | 9 | 2011 |
| Error reduction of SRAM-based physically unclonable function for chip authentication MS Kim, S Kim, SK Yoo, BS Lee, JM Yu, IW Tcho, YK Choi International Journal of Information Security 22 (5), 1087-1098, 2023 | 8 | 2023 |
| Synaptic segmented transistor with improved linearity by Schottky junctions and accelerated speed by double-layered nitride SY Kim, JM Yu, GS Lee, DH Yun, MS Kim, JK Kim, DJ Kim, GB Lee, ... ACS Applied Materials & Interfaces 14 (28), 32261-32269, 2022 | 6 | 2022 |