Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
412 2018 Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
333 2017 Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
188 2018 Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
168 2018 2 O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHzZ Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
167 2019 Delta Doped Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
163 2018 Breakdown Characteristics of 0.22 Ga0.78 )2 O3 /Ga2 O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
115 2019 Trapping Effects in Si2 O3 MESFETs on an Fe-Doped2 O3 Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
114 2018 Evaluation of Low-Temperature Saturation Velocity in x Ga1–x )2 O3 /Ga2 O3 Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
102 2019 Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 2018
78 2018 MBE-Grown2 O3 -Based Schottky UV-C Photodetectors With Rectification Ratio ~107 AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ...
IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018
68 2018 Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 2019
63 2019 β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination S Dhara, NK Kalarickal, A Dheenan, C Joishi, S Rajan
Applied Physics Letters 121 (20), 2022
42 2022 Deep-Recessed β -Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan
IEEE Transactions on Electron Devices 67 (11), 4813-4819, 2020
42 2020 Enhanced n-type β-Ga2O3 (2¯ 01) gate stack performance using Al2O3/SiO2 bi-layer dielectric D Biswas, C Joishi, J Biswas, K Thakar, S Rajan, S Lodha
Applied physics letters 114 (21), 2019
39 2019 Electrothermal Characteristics of Delta-Doped 2 O3 Metal–Semiconductor Field-Effect Transistors N Kumar, C Joishi, Z Xia, S Rajan, S Kumar
IEEE Transactions on Electron Devices 66 (12), 5360-5366, 2019
26 2019 β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching S Dhara, NK Kalarickal, A Dheenan, SI Rahman, C Joishi, S Rajan
Applied Physics Letters 123 (2), 2023
20 2023 Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha
Applied Physics Express 9 (7), 071302, 2016
13 2016 Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2 O3 MESFETs N Kumar, D Vaca, C Joishi, Z Xia, S Rajan, S Kumar
IEEE Electron Device Letters 41 (4), 641-644, 2020
12 2020 Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode P Tiwari, J Biswas, C Joishi, S Lodha
Journal of Applied Physics 130 (24), 2021
11 2021 
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityEmail yang diverifikasi di ece.osu.edu