Artikel dengan mandat akses publik - Chandan JoishiPelajari lebih lanjut
Tidak tersedia di mana pun: 11
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
Mandat: US Department of Defense
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
Mandat: US Department of Defense
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
Mandat: US Department of Defense
Enhanced n-type β-Ga2O3 (2¯ 01) gate stack performance using Al2O3/SiO2 bi-layer dielectric
D Biswas, C Joishi, J Biswas, K Thakar, S Rajan, S Lodha
Applied physics letters 114 (21), 2019
Mandat: US Department of Defense, Department of Science & Technology, India
Electrothermal Characteristics of Delta-Doped -Ga2O3 Metal–Semiconductor Field-Effect Transistors
N Kumar, C Joishi, Z Xia, S Rajan, S Kumar
IEEE Transactions on Electron Devices 66 (12), 5360-5366, 2019
Mandat: US Department of Defense
Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations
S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha
Applied Physics Express 9 (7), 071302, 2016
Mandat: Department of Science & Technology, India
Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs
N Kumar, D Vaca, C Joishi, Z Xia, S Rajan, S Kumar
IEEE Electron Device Letters 41 (4), 641-644, 2020
Mandat: US Department of Defense
Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks
S Kothari, C Joishi, H Nejad, N Variam, S Lodha
Applied Physics Letters 109 (7), 2016
Mandat: Department of Science & Technology, India
Epitaxial passivation of delta doped -Ga2O3 field effect transistors
C Joishi, Z Xia, SH Sohel, S Lodha, S Rajan
2019 Device Research Conference (DRC), 223-224, 2019
Mandat: US Department of Defense
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs
N Manikanthababu, C Joishi, J Biswas, K Prajna, K Asokan, JV Vas, ...
IEEE Transactions on Electron Devices 70 (7), 3711-3717, 2023
Mandat: Department of Science & Technology, India
Electrostatic Engineering of β-Ga2O3 Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack
R Lengare, C Joishi, S Lodha
IEEE Transactions on Electron Devices 69 (10), 5476-5483, 2022
Mandat: Department of Science & Technology, India
Tersedia di suatu tempat: 22
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
Mandat: US Department of Defense
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
Mandat: US Department of Defense
Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
Mandat: US Department of Defense
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
Mandat: US National Science Foundation, US Department of Defense
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
Mandat: US National Science Foundation, US Department of Defense
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
Mandat: US National Science Foundation, US Department of Defense
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 2018
Mandat: US Department of Defense
MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107
AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ...
IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018
Mandat: US National Science Foundation, US Department of Defense, Department of …
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 2019
Mandat: US National Science Foundation, US Department of Defense
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