Peide Ye

Dikutip oleh

	Semua	Sejak 2020
Kutipan	41196	19477
indeks-h	90	60
indeks-i10	323	214

3900

1950

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2925

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125 artikel

34 artikel

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Gang QiuUniversity of MinnesotaEmail yang diverifikasi di umn.edu
Han LiuApple Inc.Email yang diverifikasi di apple.com
Adam T. NealAir Force Research LabEmail yang diverifikasi di us.af.mil
Yi XUANUniversity of Pittsburgh School of MedicineEmail yang diverifikasi di pitt.edu
Xianfan XuPurdue UniversityEmail yang diverifikasi di purdue.edu
Yanqing WuPeking UniversityEmail yang diverifikasi di pku.edu.cn
Wenzhuo Wu (武文倬)School of IE; Flex Lab; Birck Nanotechnology Center; Purdue Quantum Science&Engineering InstituteEmail yang diverifikasi di purdue.edu
Adam CharnasAir Force Research LaboratoryEmail yang diverifikasi di purdue.edu
Hong ZhouXidian UniversityEmail yang diverifikasi di xidian.edu.cn
Zehao LinPhD Candidate in Electrical & Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Haiyan WangPurdue UniversityEmail yang diverifikasi di purdue.edu
Chang NiuPurdue UniversityEmail yang diverifikasi di purdue.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Ali ShakouriProfessor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Dennis Han Chung LinIMECEmail yang diverifikasi di imec.be
Yong P. ChenPurdue University; Aarhus University; WPI-AIMR; MUSTEmail yang diverifikasi di purdue.edu
Dieter WeissUniversitaet Regensburg, Max-Planck Institut FKF Stuttgart, TU München; Technical University MunichEmail yang diverifikasi di ur.de
M. HongNatl Taiwan Univ. Bell LaboratoriesEmail yang diverifikasi di phys.ntu.edu.tw
Sami AlghamdiAssociate Professor at King Abdulaziz University - PhD, Purdue UniversityEmail yang diverifikasi di kau.edu.sa
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu

Ikuti

Peide Ye

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University

Email yang diverifikasi di purdue.edu - Beranda

Microelectronic devices nano-materials nano-electronics condense-matter physics


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014	6748	2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015	1578	2015
Black Phosphorus–Monolayer MoS₂ van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014	1361	2014
Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020	979	2020
Channel Length Scaling of MoS₂ MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012	941	2012
Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂ L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014	822	2014
Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018	814	2018
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015	741	2015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007	644	2007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 2005	612	2005
Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014	587	2014
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012	567	2012
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	547	2018
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012	546	2012
A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019	518	2019
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014	505	2014
Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995	452	1995
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	421	2003
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008	410	2008
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions Y Xu, C Cheng, S Du, J Yang, B Yu, J Luo, W Yin, E Li, S Dong, P Ye, ... ACS nano 10 (5), 4895-4919, 2016	404	2016

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