Excitonic Linewidth Approaching the Homogeneous Limit in F Cadiz, E Courtade, C Robert, G Wang, Y Shen, H Cai, T Taniguchi, ...
Physical Review X 7 (2), 021026, 2017
833 2017 Exciton radiative lifetime in transition metal dichalcogenide monolayers C Robert, D Lagarde, F Cadiz, G Wang, B Lassagne, T Amand, ...
Physical review B 93 (20), 205423, 2016
524 2016 In-plane propagation of light in transition metal dichalcogenide monolayers: optical selection rules G Wang, C Robert, MM Glazov, F Cadiz, E Courtade, T Amand, ...
Physical review letters 119 (4), 047401, 2017
400 2017 Charged excitons in monolayer E Courtade, M Semina, M Manca, MM Glazov, C Robert, F Cadiz, G Wang, ...
Physical Review B 96 (8), 085302, 2017
322 2017 Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers C Robert, T Amand, F Cadiz, D Lagarde, E Courtade, M Manca, ...
Physical review B 96 (15), 155423, 2017
222 2017 Enabling valley selective exciton scattering in monolayer WSe2 through upconversion M Manca, MM Glazov, C Robert, F Cadiz, T Taniguchi, K Watanabe, ...
Nature communications 8 (1), 14927, 2017
181 2017 Control of exciton valley coherence in transition metal dichalcogenide monolayers G Wang, X Marie, BL Liu, T Amand, C Robert, F Cadiz, P Renucci, ...
Physical review letters 117 (18), 187401, 2016
178 2016 Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure F Cadiz, C Robert, E Courtade, M Manca, L Martinelli, T Taniguchi, ...
Applied Physics Letters 112 (15), 2018
170 2018 Optical spectroscopy of excited exciton states in C Robert, MA Semina, F Cadiz, M Manca, E Courtade, T Taniguchi, ...
Physical Review Materials 2 (1), 011001, 2018
144 2018 Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 106 B Guha, F Marsault, F Cadiz, L Morgenroth, V Ulin, V Berkovitz, ...
Optica 4 (2), 218-221, 2017
137 2017 Excitonic properties of semiconducting monolayer and bilayer C Robert, R Picard, D Lagarde, G Wang, JP Echeverry, F Cadiz, ...
Physical Review B 94 (15), 155425, 2016
91 2016 Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides F Cadiz, C Robert, G Wang, W Kong, X Fan, M Blei, D Lagarde, M Gay, ...
2D Materials 3 (4), 045008, 2016
88 2016 Well separated trion and neutral excitons on superacid treated MoS2 monolayers F Cadiz, S Tricard, M Gay, D Lagarde, G Wang, C Robert, P Renucci, ...
Applied Physics Letters 108 (25), 2016
75 2016 Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers C Robert, S Park, F Cadiz, L Lombez, L Ren, H Tornatzky, A Rowe, ...
Nature communications 12 (1), 5455, 2021
68 2021 Imaging ambipolar diffusion of photocarriers in GaAs thin films. EP D. Paget, F. Cadiz, A.C.H. Rowe, F. Moreau, S. Arscott
Journal of Applied Physics 111, 123720, 2012
31 2012 Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field F Cadiz, A Djeffal, D Lagarde, A Balocchi, B Tao, B Xu, S Liang, M Stoffel, ...
Nano Letters 18 (4), 2381-2386, 2018
30 2018 All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence. EP F. Cadiz, P. Barate, D. Paget, D. Grebenkov, J.P. Korb, A.C.H. Rowe, T ...
Journal of Applied Physics 116, 023711, 2014
25 2014 Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation. EP F. Cadiz, D. Paget, A.C.H. Rowe, V.L. Berkovits, V.P. Ulin, S. Arscott
Journal of Applied Physics 114, 103711, 2013
25 2013 Effect of the Pauli principle on photoelectron spin transport in F Cadiz, D Paget, ACH Rowe, T Amand, P Barate, S Arscott
Physical Review B 91 (16), 165203, 2015
20 2015 Bias Dependence of the Electrical Spin Injection into GaAs from P Barate, SH Liang, TT Zhang, J Frougier, B Xu, P Schieffer, M Vidal, ...
Physical Review Applied 8 (5), 054027, 2017
19 2017 
Xavier MARIEProfessor of Physics, Institut National des Sciences Appliquées, LPCNO ToulouseEmail yang diverifikasi di insa-toulouse.fr