Anharmonicity and disorder in the black phases of cesium lead iodide used for stable inorganic perovskite solar cells A Marronnier, G Roma, S Boyer-Richard, L Pedesseau, JM Jancu, ...
ACS nano 12 (4), 3477-3486, 2018
696 2018 Energy-band structure of Ge, Si, and GaAs: A thirty-band S Richard, F Aniel, G Fishman
Physical Review B—Condensed Matter and Materials Physics 70 (23), 235204, 2004
234 2004 Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature DT Nguyen, L Lombez, F Gibelli, S Boyer-Richard, A Le Corre, O Durand, ...
Nature Energy 3 (3), 236-242, 2018
124 2018 Symmetry-based tight binding modeling of halide perovskite semiconductors S Boyer-Richard, C Katan, B Traore, R Scholz, JM Jancu, J Even
The journal of physical chemistry letters 7 (19), 3833-3840, 2016
88 2016 Energy-band structure in strained silicon: A 20-band S Richard, F Aniel, G Fishman, N Cavassilas
Journal of applied physics 94 (3), 1795-1799, 2003
76 2003 Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ...
Applied Physics Letters 98 (25), 2011
47 2011 Band diagrams of Si and Ge quantum wells via the 30-band S Richard, F Aniel, G Fishman
Physical Review B—Condensed Matter and Materials Physics 72 (24), 245316, 2005
46 2005 Strained silicon on SiGe: Temperature dependence of carrier effective masses S Richard, N Cavassilas, F Aniel, G Fishman
Journal of applied physics 94 (8), 5088-5094, 2003
44 2003 Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering W Guo, A Bondi, C Cornet, A Létoublon, O Durand, T Rohel, ...
Applied Surface Science 258 (7), 2808-2815, 2012
39 2012 30-band k⋅ p method for quantum semiconductor heterostructures S Boyer-Richard, F Raouafi, A Bondi, L Pedesseau, C Katan, JM Jancu, ...
Applied Physics Letters 98 (25), 2011
32 2011 First step to Si photonics: synthesis of quantum dot light‐emitters on GaP substrate by MBE W Guo, A Bondi, C Cornet, H Folliot, A Létoublon, S Boyer‐Richard, ...
physica status solidi c 6 (10), 2207-2211, 2009
22 2009 Spin-induced forbidden evanescent states in III-V semiconductors N Rougemaille, HJ Drouhin, S Richard, G Fishman, AK Schmid
Physical review letters 95 (18), 186406, 2005
22 2005 Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD L Pedesseau, J Even, A Bondi, W Guo, S Richard, H Folliot, C Labbé, ...
Journal of Physics D: Applied Physics 41 (16), 165505, 2008
20 2008 Structure of spin-split evanescent states in the fundamental gap of zinc-blende-type semiconductors S Richard, HJ Drouhin, N Rougemaille, G Fishman
Journal of applied physics 97 (8), 2005
20 2005 Photoelectrochemical water oxidation of GaP 1− x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting M Alqahtani, S Sathasivam, L Chen, P Jurczak, R Piron, C Levallois, ...
Sustainable Energy & Fuels 3 (7), 1720-1729, 2019
17 2019 Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices S Boyer-Richard, C Robert, L Gérard, JP Richters, R André, J Bleuse, ...
Nanoscale research letters 7, 1-5, 2012
17 2012 MG áKanatzidis, J. áEven A á Marronnier, G á Roma, S á Boyer-Richard, L á Pedesseau, ...
ACS Nano 12, 3477, 2018
16 2018 Modélisation Physique de la structure électronique, du transport et de l'ionisation par choc dans les matériaux IV-IV massifs, contraints et dans les puits quantiques S Richard
Université Paris Sud-Paris XI, 2004
13 2004 Theoretical insights into hybrid perovskites for photovoltaic applications J Even, S Boyer-Richard, M Carignano, L Pedesseau, JM Jancu, C Katan
Physics and Simulation of Optoelectronic Devices XXIV 9742, 203-212, 2016
11 2016 Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells L Chen, M Alqahtani, C Levallois, A Létoublon, J Stervinou, R Piron, ...
Solar Energy Materials and Solar Cells 221, 110888, 2021
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