Sami Alghamdi

Dikutip oleh

	Semua	Sejak 2020
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Hong ZhouXidian UniversityEmail yang diverifikasi di xidian.edu.cn
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Mengwei Si（司梦维）Shanghai Jiao Tong UniversityEmail yang diverifikasi di sjtu.edu.cn
Gang QiuUniversity of MinnesotaEmail yang diverifikasi di umn.edu
Xiabing LouHarvard UniversityEmail yang diverifikasi di fas.harvard.edu
Zhihong LiuXidian University, ChinaEmail yang diverifikasi di xidian.edu.cn
Hagyoul BaeJeonbuk National University, EEEmail yang diverifikasi di jbnu.ac.kr
Emad GhandourahDepartment of Nuclear Engineering, Faculty of Engineering, King Abdulaziz University, Jeddah, SaudiEmail yang diverifikasi di kau.edu.sa
Jinhyun NohTexas InstrumentsEmail yang diverifikasi di ti.com
Wonil ChungIntel CorporationEmail yang diverifikasi di intel.com
Adam CharnasAir Force Research LaboratoryEmail yang diverifikasi di purdue.edu

Ikuti

Sami Alghamdi

Associate Professor at King Abdulaziz University - PhD, Purdue University

Email yang diverifikasi di kau.edu.sa - Beranda

III-V Semiconductors Wide Bandgap Semiconductors Charge pumping Ferroelectric FETs Carbon Nanotubes


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide IEEE Electron Device Letters 38 (1), 103-106, 2016	327	2016
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing H Zhou, S Alghmadi, M Si, G Qiu, DY Peide IEEE Electron Device Letters 37 (11), 1411-1414, 2016	153	2016
High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ... IEEE Electron Device Letters 37 (5), 556-559, 2016	60	2016
Epitaxial Growth of Mg_xCa_1–xO on GaN by Atomic Layer Deposition X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ... Nano letters 16 (12), 7650-7654, 2016	43	2016
Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu₂O and Nanomembrane β-Ga₂O₃ pn Oxide Heterojunction H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ... ACS omega 4 (24), 20756-20761, 2019	41	2019
Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in -Ga₂O₃ FETs H Bae, J Noh, S Alghamdi, M Si, DY Peide IEEE Electron Device Letters 39 (11), 1708-1711, 2018	25	2018
Recent Advanced Ultra‐Wide Bandgap β‐Ga₂O₃ Material and Device Technologies S Sun, C Wang, S Alghamdi, H Zhou, Y Hao, J Zhang Advanced Electronic Materials 11 (1), 2300844, 2025	22	2025
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing C Wang, Q Yan, C Su, S Alghamdi, E Ghandourah, Z Liu, X Feng, ... IEEE Electron Device Letters 44 (3), 380-383, 2023	21	2023
Proposal and Simulation of Ga₂O₃ MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation W Lei, K Dang, H Zhou, J Zhang, C Wang, Q Xin, S Alghamdi, Z Liu, ... IEEE Transactions on Electron Devices 69 (7), 3617-3622, 2022	17	2022
β-Ga₂O₃ Lateral Schottky Barrier Diodes With> 10 kV Breakdown Voltage and Anode Engineering C Wang, Q Yan, C Zhang, C Su, K Zhang, S Sun, Z Liu, W Zhang, ... IEEE Electron Device Letters 44 (10), 1684-1687, 2023	16	2023
Synergistic multi-functional N-doped carbon Nanocage@ CNT/ZnMn2O4/Ti3C2 MXene: Powering battery, supercapacitor, and catalyzing hydrogen evolution AOM Alzahrani, H Hassan, MW Iqbal, AO Alosaimi, S Alghamdi, ... International Journal of Hydrogen Energy 66, 415-429, 2024	14	2024
Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density S Alghamdi, M Si, H Bae, H Zhou, DY Peide IEEE Transactions on Electron Devices 67 (2), 444-448, 2020	13	2020
Low frequency noise in MOS₂ negative capacitance field-effect transistor S Alghamdi, M Si, L Yang, DY Peide 2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 1-1-P-TX …, 2018	13	2018
X-shaped exposed core highly sensitive plasmonic sensor for cancer cell detection A Rahman, MS Islam, M Alharbi, MH Pappu, IM Mehedi, S Alghamdi, ... Optical and Quantum Electronics 56 (5), 718, 2024	12	2024
Surface plasmon resonance voltage sensor based on a liquid crystal-infiltrated hollow fiber MS Islam, MA Mollah, AF Alkhateeb, W Zouch, S Alghamdi Optical Materials Express 12 (12), 4630-4642, 2022	7	2022
Low frequency noise in MOS S Alghamdi, M Si, L Yang, PD Ye Proc. IEEE Int. Rel. Phys. Symp.(IRPS), 1-5, 0	6
Rice husk-derived P-doped CNTs on Cu–ZnO/NPC as a binder-free electrodes for aqueous supercapacitors and oxygen evolution AOM Alzahrani, H Hassan, MW Iqbal, AO Alosaimi, S Alghamdi, ... Inorganic Chemistry Communications 168, 112860, 2024	4	2024
High index core flat fiber surface plasmon resonance bio-sensor AF Alkhateeb, MS Islam, MY Ali, RJ Usha, S Tasnim, S Alghamdi, ... Applied Optics 61 (20), 5885-5893, 2022	4	2022
Real-time energy management simulation for enhanced integration of renewable energy resources in DC microgrids H Hadi H. Awaji, AA Alhussainy, AH Alobaidi, S Alghamdi, S Alghamdi, ... Frontiers in Energy Research 12, 1458115, 2024	3	2024
1.56 kV/30 A vertical β-Ga₂O₃ Schottky barrier diodes with composite edge terminations Y Feng, H Zhou, S Alghamdi, H Fang, X Zhang, Y Chen, G Tian, S Wasly, ... Science China Information Sciences 68 (2), 129401, 2025	2	2025

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