| Methods of forming highly p-type doped germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,647,114, 2017 | 444 | 2017 |
| Methods of forming silicon germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,905,420, 2018 | 429 | 2018 |
| Process for forming a film on a substrate using multi-port injection assemblies J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 10,262,859, 2019 | 428 | 2019 |
| Radial and thickness control via biased multi-port injection settings J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 9,892,913, 2018 | 428 | 2018 |
| Method for depositing a group IV semiconductor and related semiconductor device structures J Margetis, J Tolle US Patent 11,374,112, 2022 | 380 | 2022 |
| Methods for forming a silicon germanium tin layer and related semiconductor device structures N Bhargava, J Margetis, J Tolle US Patent 10,685,834, 2020 | 379 | 2020 |
| Methods for forming silicon-containing epitaxial layers and related semiconductor device structures N Bhargava, J Tolle, J Margetis, M Goodman, R Vyne US Patent 10,446,393, 2019 | 379 | 2019 |
| Method for depositing a group IV semiconductor and related semiconductor device structures J Tolle, J Margetis US Patent 10,541,333, 2020 | 377 | 2020 |
| Temperature-controlled flange and reactor system including same S Sreeram, J Tolle, J Margetis, J Su US Patent 10,612,136, 2020 | 353 | 2020 |
| Temperature-controlled flange and reactor system including same S Sreeram, J Tolle, J Margetis, J Su US Patent 11,168,395, 2021 | 301 | 2021 |
| Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly J Tolle, JP Margetis US Patent 11,814,747, 2023 | 300 | 2023 |
| Method for cleaning quartz epitaxial chambers G Deye, JP Margetis, J Tolle US Patent App. 16/888,423, 2020 | 286 | 2020 |
| Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation J Tolle, J Margetis, D Kohen US Patent 11,557,474, 2023 | 285 | 2023 |
| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 254 | 2016 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014 | 243 | 2014 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... Acs Photonics 6 (11), 2807-2815, 2019 | 228 | 2019 |
| Electrically injected GeSn lasers on Si operating up to 100 K Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Optica 7 (8), 924-928, 2020 | 219 | 2020 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 212 | 2017 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 166 | 2016 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 156 | 2016 |
