Optical and transport properties of ultrathin NbN films and nanostructures A Semenov, B Günther, U Böttger, HW Hübers, H Bartolf, A Engel, ...
Physical Review B—Condensed Matter and Materials Physics 80 (5), 054510, 2009
242 2009 Current-assisted thermally activated flux liberation in ultrathin nanopatterned NbN superconducting meander structures H Bartolf, A Engel, A Schilling, K Il’in, M Siegel, HW Hübers, A Semenov
Physical Review B—Condensed Matter and Materials Physics 81 (2), 024502, 2010
197 2010 Ultra-thin NbN films on Si: crystalline and superconducting properties K Ilin, R Schneider, D Gerthsen, A Engel, H Bartolf, A Schilling, ...
Journal of Physics: Conference Series 97 (1), 012045, 2008
62 2008 Development of a 60 H Bartolf, A Mihaila, I Nistor, M Jurisch, B Leibold, M Zimmermann
IEEE transactions on semiconductor manufacturing 26 (4), 529-541, 2013
36 2013 Robust 3.3 kV silicon carbide MOSFETs with surge and short circuit capability L Knoll, A Mihaila, F Bauer, V Sundaramoorthy, E Bianda, R Minamisawa, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
35 2017 Current-induced critical state in NbN thin-film structures K Il’in, M Siegel, A Engel, H Bartolf, A Schilling, A Semenov, HW Huebers
Journal of Low Temperature Physics 151, 585-590, 2008
32 2008 Study of 4H-SiC Schottky diode designs for 3.3 kV applications H Bartolf, V Sundaramoorthy, A Mihaila, M Berthou, P Godignon, J Millan
Materials Science Forum 778, 795-799, 2014
30 2014 Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET D Dutta, DS De, D Fan, S Roy, G Alfieri, M Camarda, M Amsler, ...
Applied Physics Letters 115 (10), 2019
25 2019 Fluctuation mechanisms in superconductors H Bartolf
Fluctuation Mechanisms in Superconductors: Nanowire Single-Photon Counters …, 2015
25 2015 Temperature-and field-dependence of critical currents in NbN microbridges A Engel, H Bartolf, A Schilling, K Il'in, M Siegel, A Semenov, HW Hübers
Journal of Physics: Conference Series 97 (1), 012152, 2008
23 2008 A novel edge termination for high voltage SiC devices A Mihaila, VK Sundaramoorthy, R Minamisawa, L Knoll, H Bartolf, ...
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
19 2016 Dopant imaging of power semiconductor device cross sections U Gysin, E Meyer, T Glatzel, G Günzburger, HR Rossmann, TA Jung, ...
Microelectronic Engineering 160, 18-21, 2016
16 2016 Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication H Bartolf, K Inderbitzin, LB Gómez, A Engel, A Schilling
Journal of Micromechanics and Microengineering 20 (12), 125015, 2010
16 2010 Fabrication of metallic structures with lateral dimensions less than 15 nm and Jc (T)-measurements in NbN micro-and nanobridges H Bartolf, A Engel, A Schilling, K Il’in, M Siegel
Physica C: Superconductivity and its applications 468 (7-10), 793-796, 2008
16 2008 Hall effect across the quantum phase transition of CeCu6-xAux H Bartolf, C Pfleiderer, O Stockert, M Vojta, H Löhneysen
Physica B: Condensed Matter 359, 86-88, 2005
13 2005 Fabrication and characterization of superconducting nanowire highspeed single-photon detectors H Bartolf
Verlag nicht ermittelbar, 2011
11 2011 Magnetic vortices in superconducting photon detectors A Engel, H Bartolf, A Schilling, A Semenov, HW Hübers, K Il'in, M Siegel
Journal of Modern Optics 56 (2-3), 352-357, 2009
10 2009 Study on transient light emission of SiC power MOSFETs regarding the sensing of source-drain currents in hard-switched power electronic applications J Winkler, J Homoth, H Bartolf, I Kallfass
PCIM Europe 2019; International Exhibition and Conference for Power …, 2019
9 2019 Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices U Gysin, T Glatzel, T Schmölzer, A Schöner, S Reshanov, H Bartolf, ...
Beilstein journal of nanotechnology 6 (1), 2485-2497, 2015
9 2015 Multi-project wafer scale process for productive research and development H Bartolf, A Engel, L Gómez, A Schilling
Raith Application Note, 2008
9 2008 
Andreas SchillingUniversity of ZurichEmail yang diverifikasi di physik.uzh.ch
