| Morpho butterfly wing scales demonstrate highly selective vapour response RA Potyrailo, H Ghiradella, A Vertiatchikh, K Dovidenko, JR Cournoyer, ... Nature Photonics 1 (2), 123-128, 2007 | 625 | 2007 |
| Towards high-speed imaging of infrared photons with bio-inspired nanoarchitectures AD Pris, Y Utturkar, C Surman, WG Morris, A Vert, S Zalyubovskiy, T Deng, ... Nature Photonics 6 (3), 195-200, 2012 | 236 | 2012 |
| Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors AP Zhang, LB Rowland, EB Kaminsky, V Tilak, JC Grande, J Teetsov, ... Journal of electronic materials 32, 388-394, 2003 | 198 | 2003 |
| Hot-phonon temperature and lifetime in a biased Al x Ga 1− x N/G a N channel estimated from noise analysis A Matulionis, J Liberis, I Matulionienė, M Ramonas, LF Eastman, ... Physical Review B 68 (3), 035338, 2003 | 158 | 2003 |
| Electron drift velocity in AlGaN/GaN channel at high electric fields L Ardaravičius, A Matulionis, J Liberis, O Kiprijanovic, M Ramonas, ... Applied Physics Letters 83 (19), 4038-4040, 2003 | 142 | 2003 |
| Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor AV Vertiatchikh, LF Eastman, WJ Schaff, T Prunty Electronics Letters 38 (8), 388-389, 2002 | 139 | 2002 |
| Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance AV Vertiatchikh, LF Eastman IEEE Electron Device Letters 24 (9), 535-537, 2003 | 101 | 2003 |
| Deep UV photon-counting detectors and applications GA Shaw, AM Siegel, J Model, A Geboff, S Soloviev, A Vert, P Sandvik Advanced Photon Counting Techniques III 7320, 88-102, 2009 | 94 | 2009 |
| Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ... physica status solidi (a) 195 (1), 101-105, 2003 | 87 | 2003 |
| Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ... Applied Physics Letters 82 (5), 748-750, 2003 | 73 | 2003 |
| GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction T Orzali, A Vert, B O'Brien, JL Herman, S Vivekanand, RJW Hill, Z Karim, ... Journal of Applied Physics 118 (10), 2015 | 70 | 2015 |
| High temperature Hall effect sensors based on AlGaN∕ GaN heterojunctions H Lu, P Sandvik, A Vertiatchikh, J Tucker, A Elasser Journal of applied physics 99 (11), 2006 | 64 | 2006 |
| Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode A Vert, S Soloviev, J Fronheiser, P Sandvik IEEE Photonics Technology Letters 20 (18), 1587-1589, 2008 | 62 | 2008 |
| High-power monolithic AlGaN/GaN HEMT oscillator VS Kaper, V Tilak, H Kim, AV Vertiatchikh, RM Thompson, TR Prunty, ... IEEE Journal of Solid-State Circuits 38 (9), 1457-1461, 2003 | 60 | 2003 |
| Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN A Vertiatchikh, E Kaminsky, J Teetsov, K Robinson Solid-State Electronics 50 (7-8), 1425-1429, 2006 | 59 | 2006 |
| Hot electron induced degradation of undoped AlGaN/GaN HFETs H Kim, A Vertiatchikh, RM Thompson, V Tilak, TR Prunty, JR Shealy, ... Microelectronics Reliability 43 (6), 823-827, 2003 | 46 | 2003 |
| System and method for adjusting engine parameters based on flame visualization A Krull, D Leach, G Kraemer, G Myers, A Vert, G Frederick, S Aljabari US Patent 8,432,440, 2013 | 44 | 2013 |
| Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ... Applied physics letters 80 (12), 2126-2128, 2002 | 40 | 2002 |
| Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping T Orzali, A Vert, B O'Brian, JL Herman, S Vivekanand, SS Papa Rao, ... Journal of Applied Physics 120 (8), 2016 | 37 | 2016 |
| Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature A Matulionis, J Liberis, L Ardaravičius, LF Eastman, JR Shealy, ... Semiconductor science and technology 19 (4), S421, 2004 | 34 | 2004 |
