Joe McGlone

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Steven RingelThe Ohio State UniversityEmail yang diverifikasi di osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityEmail yang diverifikasi di ece.osu.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Chandan JoishiResearch Scientist, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityEmail yang diverifikasi di asu.edu
Wyatt MooreGraduate Research Assistant, The Ohio State UniversityEmail yang diverifikasi di buckeyemail.osu.edu
Saurabh LodhaP. K. Kelkar Chair Professor, Electrical Engineering, IIT BombayEmail yang diverifikasi di ee.iitb.ac.in
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUEmail yang diverifikasi di osu.edu
Zixuan FengThe Ohio State UniversityEmail yang diverifikasi di osu.edu
Dr. Hemant GhadiOhio State UniversityEmail yang diverifikasi di osu.edu
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellEmail yang diverifikasi di uml.edu
Yuewei ZhangUCSBEmail yang diverifikasi di ucsb.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityEmail yang diverifikasi di osu.edu
Sriram KrishnamoorthyUniversity of California, Santa BarbaraEmail yang diverifikasi di ucsb.edu
Wu Lu, ProfessorThe Ohio State UniversityEmail yang diverifikasi di osu.edu
Ashok DheenanPhD student, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Jared M JohnsonThe Ohio State UniversityEmail yang diverifikasi di thermofisher.com
Christine M. JacksonDepartment of Electrical and Computer Engineering, The Ohio State UniveristyEmail yang diverifikasi di osu.edu
Shahadat Hasan SohelIntelEmail yang diverifikasi di intel.com

Ikuti

Joe McGlone

Research Scientist, ECE and IMR at Ohio State University

Email yang diverifikasi di osu.edu - Beranda

Ga2O3


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	333	2017
-Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019	167	2019
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019	149	2019
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃ Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020	121	2020
Trapping Effects in Si 𝛿-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate JF Mcglone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 2018	114	2018
Evaluation of Low-Temperature Saturation Velocity in -(Al_xGa_1–x)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ... IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019	102	2019
High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ... Journal of Applied Physics 127 (21), 2020	101	2020
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020	80	2020
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ... Applied Physics Letters 113 (12), 2018	78	2018
Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ... Applied Physics Letters 115 (15), 2019	73	2019
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020	64	2020
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart Applied Physics Letters 115 (15), 2019	63	2019
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020	40	2020
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3 JF McGlone, H Ghadi, E Cornuelle, A Armstrong, G Burns, Z Feng, ... Journal of Applied Physics 133 (4), 2023	22	2023
β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy AV Dheenan, JF McGlone, NK Kalarickal, HL Huang, M Brenner, J Hwang, ... Applied Physics Letters 121 (11), 2022	14	2022
Velocity saturation in La-doped BaSnO3 thin films H Chandrasekar, J Cheng, T Wang, Z Xia, NG Combs, CR Freeze, ... Applied Physics Letters 115 (9), 2019	13	2019
Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3 H Ghadi, JF McGlone, E Cornuelle, Z Feng, Y Zhang, L Meng, H Zhao, ... APL Materials 10 (10), 2022	9	2022
Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density> 550 mA/mm NK Kalarickal, A Dheenan, JF McGlone, S Dhara, M Brenner, SA Ringel, ... Applied Physics Letters 122 (11), 2023	8	2023
Ferroelectric HfO2 Thin Films for FeFET Memory Devices JF McGlone Journal of the Microelectronic Engineering Conference 22 (1), 24, 2016	8	2016
Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies H Ghadi, JF McGlone, E Cornuelle, A Senckowski, S Sharma, MH Wong, ... APL Materials 11 (11), 2023	7	2023

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