Michael Shur

Dikutip oleh

	Semua	Sejak 2020
Kutipan	79975	16550
indeks-h	123	56
indeks-i10	1021	400

4100

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1986198719881989199019911992199319941995199619971998199920002001200220032004200520062007200820092010201120122013201420152016201720182019202020212022202320242025325 401 287 429 432 455 434 483 413 577 755 935 994 1151 1240 1244 1644 1910 2063 2240 2347 2311 2740 2690 2783 2887 2889 3322 3236 3293 3492 3559 3593 4081 4055 3707 3017 2773 2575 417

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65 artikel

54 artikel

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Remis GaskaUVTON, Inc.Email yang diverifikasi di uvton.com
Grigory SiminUniversity of South CarolinaEmail yang diverifikasi di engr.sc.edu
Max ShatalovCVD Equipment CorporationEmail yang diverifikasi di cvdequipment.com
Taiichi OtsujiRIEC, Tohoku UniversityEmail yang diverifikasi di riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDEmail yang diverifikasi di unipress.waw.pl
Maxim RyzhiiS. Associate Professor, University of AizuEmail yang diverifikasi di u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityEmail yang diverifikasi di fiu.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloEmail yang diverifikasi di buffalo.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTEmail yang diverifikasi di kaist.ac.kr
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLAEmail yang diverifikasi di seas.ucla.edu
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Email yang diverifikasi di soire.renet.ru
Dmitry VekslerHRL LaboratoryEmail yang diverifikasi di hrl.com
Qhalid FareedTexas InstrumentsEmail yang diverifikasi di ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSEmail yang diverifikasi di umontpellier.fr
Guanxiong LiuUniversity of California RiversideEmail yang diverifikasi di ee.ucr.edu
Juras MickeviciusVilnius UniversityEmail yang diverifikasi di ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombEmail yang diverifikasi di umontpellier.fr
Mikhail GaevskiCVD Equipment CorporationEmail yang diverifikasi di CVDEquipment.com
Hadis MorkoçVirginia Commonwealth UniversityEmail yang diverifikasi di vcu.edu
Irina KhmyrovaUniversity of AizuEmail yang diverifikasi di u-aizu.ac.jp

Ikuti

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Email yang diverifikasi di rpi.edu - Beranda

semiconductors


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2192	2001
Handbook series on semiconductor parameters M Levinshtein World scientific, 1997	2056*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1504	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1350	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 2002	1308	2002
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1052	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	996	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	836	1980
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	723	1999
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	691	2000
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	646	2005
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	601	1984
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	593	1991
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	572	2006
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	539	2012
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	538	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	534	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	506	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	490	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	475	1997

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