Solidification Modeling: Evolution, Benchmarks, Trends in Handling Turbulence, and Future Directions S Verma, A Dewan Metallurgical and Materials Transactions B 45 (4), 1456-1471, 2014 | 26 | 2014 |
Studies on Schottky Barrier Diodes fabricated using single crystal wafers of β‐Ga2O3 grown by OFZ technique D Dhanabalan, V Ananthu, KV Akshita, S Bhattacharya, E Varadarajan, ... physica status solidi (b), 2021 | 12* | 2021 |
Partially-Averaged Navier-Stokes (PANS) approach for study of fluid flow and heat transfer characteristics in Czochralski melt S Verma, A Dewan Journal of Crystal Growth 481, 56–64, 2018 | 8 | 2018 |
Thermo-fluid characteristics of Czochralski melt convection using 3D URANS computations S Verma, A Dewan ASME Journal of Thermal Science and Engineering Applications 11 (6), 061017, 2019 | 6 | 2019 |
A study of thermo-fluid characteristics of Czochralski melt using rotation and curvature corrected Partially-Averaged Navier-Stokes (PANS) turbulence models S Verma, A Dewan International Journal of Thermal Sciences 140, 50-58, 2019 | 6 | 2019 |
Deciphering the flow structure of Czochralski melt using Partially Averaged Navier–Stokes (PANS) method S Verma, A Dewan Sadhana 43 (1), 1-5, 2018 | 4 | 2018 |
Assessment of Characteristics of Phase Change Region during Solidification of a Binary Alloy in Different Flow Regimes S Verma, A Dewan Materials Today: Proceedings 4 (9), 9445-9449, 2017 | 3 | 2017 |
X-Ray Pole figure analysis for orienting TGSM grown bulk ZnTe crystal for Terahertz device applications S Verma, A Pandey, S Dalal, M Srivastava, R Raman Journal of Materials Science: Materials in Electronics 34 (9), 817:1-10, 2023 | 2 | 2023 |
Solidification with Buoyancy Induced Convection: Evaluation of Different Mushy Zone Formulations S Verma, A Dewan Proceeding of Indian National Science Academy 82 (2), 309-319, 2016 | 2 | 2016 |
Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template RK Bag, R Tyagi, P Mohan, K Narang, S Verma, R Muralidharan 16th International Workshop on Physics of Semiconductor Devices 8549, 145-150, 2012 | 2 | 2012 |
Investigations on near band‑edge optical excitation response in bulk ZnTe single crystals Priyanka, S Verma, A Pandey, A Tanwar, M Sinha, M Kumari, KD Verma, ... Applied Physics A 130 (108), 2024 | | 2024 |
Temperature effects on Raman Characteristic of bulk (110) ZnTe Priyanka, S Verma, A Tanwar, M Sinha, A Pandey, KD Verma, R Raman, ... International Union of Materials Research Society (IUMRS), IIT Jodhpur …, 2022 | | 2022 |
Excitation power dependent Photoluminescence characteristics of bulk ZnTe (110) substrates grown by TGSM Priyanka, S Verma, V Kumar Singh, B Singh Yadav, A Tanwar, M Sinha, ... International Workshop on Physics of Semiconductor Devices (IWPSD) 2021, IIT …, 2021 | | 2021 |
Single crystal growth of undoped and Sn doped Ga2O3 by OFZ technique and their characterization D Dhandapani, A Vijayan, S Bhattacharya, E Varadarajan, ... Compound Semiconductor Week 2020, Stockholm, 2020 | | 2020 |
ZnTe Crystal growth and its assessment for THz related applications S Verma, M Sinha, A Tanwar, VK Gandotra, M Srivastava, R Tyagi, ... Crystal 24 (2), 1-4, 2019 | | 2019 |
A Computational Study of Phase Change and Melt Turbulence using PANS Modelling in Solidification Systems S Verma Indian Institute of Technology Delhi, 2019 | | 2019 |
Growth of Optical Grade Germanium (Ge) Single Crystals by Czochralski Technique S Verma The Physics of Semiconductor Devices, Springer Proceedings in Physics 215, 1-8, 2018 | | 2018 |
Growth and characterization of Hg1-xCdxTe epitaxial films by isothermal vapour phase epitaxy (ISOVPE) M Malhotra, M Gautam, JK Radhakrishnan, V Kapoor, S Verma, U Kumar, ... Bulletin of Materials Science 28, 97-102, 2005 | | 2005 |
Electrical Conductivity & Thermo emf Measurements R MURALIDHARAN, SN VERMA, VK JAIN Indian Journal of Pure & Applied Physics 17 (1-6), 265, 1979 | | 1979 |