InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs SR Kurtz, AA Allerman, ED Jones, JM Gee, JJ Banas, BE Hammons
Applied Physics Letters 74 (5), 729-731, 1999
682 1999 Three-dimensional control of light in a two-dimensional photonic crystal slab E Chow, SY Lin, SG Johnson, PR Villeneuve, JD Joannopoulos, ...
Nature 407 (6807), 983-986, 2000
584 2000 Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
385 2000 Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 2005
366 2005 Band structure of In x Ga 1− x As 1− y N y alloys and effects of pressure ED Jones, NA Modine, AA Allerman, SR Kurtz, AF Wright, ST Tozer, X Wei
Physical Review B 60 (7), 4430, 1999
269 1999 Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ...
Applied physics letters 86 (3), 2005
239 2005 Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
235 2004 InGaAsN/GaAs heterojunction for multi-junction solar cells SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
228 2001 Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
217 2004 Type-II interband quantum cascade laser at 3.8 µm Lin, Yang, D Zhang, SJ Murry, SS Pei, AA Allerman, SR Kurtz
Electronics Letters 33 (7), 598-599, 1997
209 1997 Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen SR Kurtz, AA ALLERMAN, CH SEAGER, RM SIEG, ED JONES
Applied Physics Letters, 2000
201 2000 Time-resolved photoluminescence studies of RA Mair, JY Lin, HX Jiang, ED Jones, AA Allerman, SR Kurtz
Applied Physics Letters 76 (2), 188-190, 2000
191 2000 Strain relaxation in AlGaN multilayer structures by inclined dislocations DM Follstaedt, SR Lee, AA Allerman, JA Floro
Journal of Applied Physics 105 (8), 2009
183 2009 High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser WJ Alford, TD Raymond, AA Allerman
Journal of the Optical Society of America B 19 (4), 663-666, 2002
182 2002 Ultra-wide-bandgap AlGaN power electronic devices RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016
179 2016 Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
174 2002 An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
160 2016 Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ...
Applied Physics Letters 81 (11), 1940-1942, 2002
151 2002 Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
138 2015 Strong coupling in the sub-wavelength limit using metamaterial nanocavities A Benz, S Campione, S Liu, I Montano, JF Klem, A Allerman, JR Wendt, ...
Nature communications 4 (1), 2882, 2013
130 2013 