| Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs S Khemissi, N Merabtine, M Zaabat, C Kenzai, Y Saidi, S Amourache Semiconductor Physics Quantum Electronics & Optoelectronics, 2006 | 12 | 2006 |
| An analytical model for the transconductance and drain conductance of GaAs MESFETs S Khemissi, N Merabtine, C Azizi, C Kaddour 2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling …, 2010 | 6 | 2010 |
| modélisation et simulation des transistors MESFEDT GaAs S Khemissi Mémoire de, 2003 | 6 | 2003 |
| A two-dimensional analytical modeling of the current-voltage characteristics for submicron gate-length GaAs MESFETs S Khemissi, C Azizi International Journal of Engineering and Technology 12, 27-33, 2012 | 5 | 2012 |
| A two-dimensional model for the potential distribution and depletion layer width of the short gate-length GaAs MESFET's S Khemissi, C Azizi 2010 XIth International workshop on symbolic and numerical methods, modeling …, 2010 | 4 | 2010 |
| Modelisation non linéaire des composants à effet de champ K Saadeddine Mémoire de doctorat, Université de Constantine, 2009 | 4 | 2009 |
| Accurate numerical modelling the GaAs MESFET current-voltage characteristics N Merabtine, S Khemissi, M Zaabat, M Belgat, C Kenzai Semiconductor Physics Quantum Electronics & Optoelectronics, 2004 | 4 | 2004 |
| Analytical Model for GaAs MESFET with High Pinchoff Voltage C Kaddour, C Azizi, SE Khemissi, M Zaabat, Y Saidi Journal of Materials Science and Engineering. A 3 (12A), 2013 | 1 | 2013 |
| Simulation bidimensionnelle des caractéristiques IV du Transistor MESFET GaAs N Merabtine, S Khemissi, C Kenzai Sciences & Technology. A, exactes sciences, 69-74, 2004 | 1 | 2004 |
| Modeling and Simulation of Current Voltage Characteristics for Cylindrical CNTFET Transistor M Droudj, SE Khemissi Jordan Journal of Physics 16 (5), 517-526, 2023 | | 2023 |
| IV Characteristics Modeling of the Carbon Nanotube Field Effect Transistor (CNTFET) S Kattar, SE Khemissi Jordan Journal of Physics 15 (3), 279-288, 2022 | | 2022 |
| Analytical Model and Numerical Simulation for the Transconductance and Drain Conductance of GaAs MESFETs S Khemissi Numerical Simulation-From Theory to Industry, 2012 | | 2012 |
| INFLUENCE DES PARAMETRES TECHNOLOGIQUES SUR LES CARACTERISTIQUES IV DU TRANSISTOR MESFET GAAS A GRILLE COURTE. S Khemissi, N Merabtine, C Kenzai, M Benbouza Sciences & Technologie. B, Sciences de l'ingénieur, 31-36, 2005 | | 2005 |
| Dispersion frequency of parameters in components MESFET GaAs Y Saidi, W Aliouat, M Zaabat, S Khemissi, C Azizi | | |
| Influence des paramètres technologiques sur les propriétés des transistors MESFET GaAs à grille submicronique N Merabtine, M Belgat, S Khemissi, C Kenzai, M Zaabat | | |
| Modèle Analytique des Caractéristiques Statiques du Transistor MESFET GaAs a Grille Submicronique (Lg= 0, 5 µm) C AZIZI, S KHEMISSI, C KADDOUR, Y SAIDI | | |
