Követés
Sapan Agarwal
Sapan Agarwal
E-mail megerősítve itt: sandia.gov
Cím
Hivatkozott rá
Hivatkozott rá
Év
A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
Y Van De Burgt, E Lubberman, EJ Fuller, ST Keene, GC Faria, S Agarwal, ...
Nature materials 16 (4), 414-418, 2017
15812017
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing
EJ Fuller, ST Keene, A Melianas, Z Wang, S Agarwal, Y Li, Y Tuchman, ...
Science 364 (6440), 570-574, 2019
6462019
Li-ion synaptic transistor for low power analog computing
EJ Fuller, FE Gabaly, F Léonard, S Agarwal, SJ Plimpton, ...
Advanced Materials 29 (SAND-2017-0895J), 2016
5492016
Resistive memory device requirements for a neural algorithm accelerator
S Agarwal, SJ Plimpton, DR Hughart, AH Hsia, I Richter, JA Cox, ...
2016 International Joint Conference on Neural Networks (IJCNN), 929-938, 2016
2102016
Multiscale co-design analysis of energy, latency, area, and accuracy of a ReRAM analog neural training accelerator
MJ Marinella, S Agarwal, A Hsia, I Richter, R Jacobs-Gedrim, J Niroula, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2018
1912018
Analog architectures for neural network acceleration based on non-volatile memory
TP Xiao, CH Bennett, B Feinberg, S Agarwal, MJ Marinella
Applied Physics Reviews 7 (3), 2020
1842020
Tunnel field effect transistor with raised germanium source
SH Kim, S Agarwal, ZA Jacobson, P Matheu, C Hu, TJK Liu
IEEE electron device letters 31 (10), 1107-1109, 2010
1752010
Energy scaling advantages of resistive memory crossbar based computation and its application to sparse coding
S Agarwal, TT Quach, O Parekh, AH Hsia, EP DeBenedictis, CD James, ...
Frontiers in neuroscience 9, 484, 2016
1242016
Band-edge steepness obtained from Esaki/backward diode current–voltage characteristics
S Agarwal, E Yablonovitch
IEEE Transactions on Electron Devices 61 (5), 1488-1493, 2014
1012014
Panther: A programmable architecture for neural network training harnessing energy-efficient reram
A Ankit, I El Hajj, SR Chalamalasetti, S Agarwal, M Marinella, M Foltin, ...
IEEE Transactions on Computers 69 (8), 1128-1142, 2020
972020
Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors
Y Li, EJ Fuller, S Asapu, S Agarwal, T Kurita, JJ Yang, AA Talin
ACS applied materials & interfaces 11 (42), 38982-38992, 2019
942019
Engineering the electron–hole bilayer tunneling field-effect transistor
S Agarwal, JT Teherani, JL Hoyt, DA Antoniadis, E Yablonovitch
IEEE Transactions on Electron Devices 61 (5), 1599-1606, 2014
712014
Achieving ideal accuracies in analog neuromorphic computing using periodic carry
S Agarwal, RBJ Gedrim, AH Hsia, DR Hughart, EJ Fuller, AA Talin, ...
2017 Symposium on VLSI Technology, T174-T175, 2017
622017
Data-driven discovery and synthesis of high entropy alloy hydrides with targeted thermodynamic stability
M Witman, G Ek, S Ling, J Chames, S Agarwal, J Wong, MD Allendorf, ...
Chemistry of Materials 33 (11), 4067-4076, 2021
582021
Designing a low voltage, high current tunneling transistor
S Agarwal, E Yablonovitch, TJK Liu, K Kuhn
CMOS and Beyond: Logic Switches for Terascale Integrated Circuits, 79-116, 2015
58*2015
Extracting an empirical intermetallic hydride design principle from limited data via interpretable machine learning
M Witman, S Ling, DM Grant, GS Walker, S Agarwal, V Stavila, ...
The Journal of Physical Chemistry Letters 11 (1), 40-47, 2019
532019
Using floating-gate memory to train ideal accuracy neural networks
S Agarwal, D Garland, J Niroula, RB Jacobs-Gedrim, A Hsia, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
442019
Impact of quantization energy and gate leakage in bilayer tunneling transistors
JT Teherani, S Agarwal, E Yablonovitch, JL Hoyt, DA Antoniadis
IEEE Electron Device Letters 34 (2), 298-300, 2013
442013
Using dimensionality to achieve a sharp tunneling FET (TFET) turn-on
S Agarwal, E Yablonovitch
69th Device Research Conference, 199-200, 2011
432011
Redox transistors for neuromorphic computing
EJ Fuller, Y Li, C Bennet, ST Keene, A Melianas, S Agarwal, MJ Marinella, ...
IBM Journal of Research and Development 63 (6), 9: 1-9: 9, 2019
412019
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