Characterization, modeling, and application of 10-kV SiC MOSFET J Wang, T Zhao, J Li, AQ Huang, R Callanan, F Husna, A Agarwal
IEEE Transactions on Electron Devices 55 (8), 1798-1806, 2008
449 2008 Recent progress in SiC DMOSFETs and JBS diodes at Cree RJ Callanan, A Agarwal, A Burk, M Das, B Hull, F Husna, A Powell, ...
2008 34th Annual Conference of IEEE Industrial Electronics, 2885-2890, 2008
136 2008 A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching MK Das, QJ Zhang, R Callanan, C Capell, J Clayton, M Donofrio, ...
Materials Science Forum 600, 1183-1186, 2009
118 2009 High-Temperature Performance of AlGaN/GaN MOSHEMT With F Husna, M Lachab, M Sultana, V Adivarahan, Q Fareed, A Khan
IEEE Transactions on Electron Devices 59 (9), 2424-2429, 2012
97 2012 10-kV SiC MOSFET-based boost converter J Wang, X Zhou, J Li, T Zhao, AQ Huang, R Callanan, F Husna, A Agarwal
IEEE Transactions on Industry Applications 45 (6), 2056-2063, 2009
87 2009 High speed rectifier circuit R Callanan, F Husna
US Patent 8,681,518, 2014
46 2014 State of the art 10 kV NMOS transistors MK Das, R Callanan, DC Capell, B Hull, F Husna, J Richmond, ...
2008 20th International Symposium on Power Semiconductor Devices and IC's …, 2008
44 2008 20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems B Hull, R Callanan, M Das, A Agarwal, F Husna, J Palmour
2009 IEEE Energy Conversion Congress and Exposition, 112-119, 2009
42 2009 Performance of 60 A, 1200 V 4H-SiC DMOSFETs BA Hull, C Jonas, SH Ryu, MK Das, MJ O'Loughlin, F Husna, R Callanan, ...
Materials Science Forum 615, 749-752, 2009
36 2009 Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate M Lachab, M Sultana, Q Fareed, F Husna, V Adivarahan, A Khan
Journal of Physics D: Applied Physics 47 (13), 135108, 2014
29 2014 A comparison of high temperature performance of SiC DMOSFETs and JFETs SH Ryu, S Krishnaswami, BA Hull, B Heath, F Husna, J Richmond, ...
Materials science forum 556, 775-778, 2007
23 2007 4H-SiC bipolar junction transistors: From research to development-A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield Q Zhang, A Burk, F Husna, R Callanan, A Agarwal, J Palmour, ...
2009 21st International Symposium on Power Semiconductor Devices & IC's, 339-342, 2009
22 2009 10 kV SiC MOSFET based boost converter J Wang, J Li, X Zhou, T Zhao, AQ Huang, R Callanan, F Husna, A Agarwal
2008 IEEE Industry Applications Society Annual Meeting, 1-6, 2008
18 2008 Characterization of silicone gel properties for high power IGBT modules and MEMS KS Siow, TF Chen, YW Chan, A Jalar, RM Vemal, ST Chua, F Husna
2015 IEEE Conference on Sustainable Utilization And Development In …, 2015
17 2015 Effect of recombination-induced stacking faults on majority carrier conduction and reverse leakage current on 10 kV SiC DMOSFETs SH Ryu, F Husna, SK Haney, QCJ Zhang, RE Stahlbush, AK Agarwal
Materials Science Forum 600, 1127-1130, 2009
17 2009 Status of 1200v 4h-sic power dmosfets BA Hull, MK Das, SH Ryu, SK Haney, C Jonas, C Capell, L Hall, ...
2007 International Semiconductor Device Research Symposium, 1-2, 2007
15 2007 Improved 4H-SiC MOS Interfaces produced via two independent processes: metal enhanced oxidation and 1300° C NO Anneal MK Das, BA Hull, S Krishnaswami, F Husna, SK Haney, AJ Lelis, ...
Materials science forum 527, 967-970, 2006
14 2006 High temperature DC-DC converter performance comparison using SiC JFETs, BJTs and Si MOSFETs JD Scofield, H Kosai, B Jordan, SH Ryu, S Krishnaswami, F Husna, ...
Materials science forum 556, 991-994, 2007
8 2007 Improved 4H-SiC MOS interfaces produced via two independent processes: Metal enhanced oxidation and 1300C NO Anneal BA Hull, C Jonas, SH Ryu, M Das, M O’Loughlin, F Husna, R Callanan, ...
Materials Science Forum, 749-752, 2009
5 2009 First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs AK Agarwal, F Husna, J Haley, H Bartlow, B McCalpin, S Krishnaswami, ...
Materials science forum 527, 1413-1416, 2006
4 2006 