| Experimental observation of negative capacitance in ferroelectrics at room temperature DJR Appleby, NK Ponon, KSK Kwa, B Zou, PK Petrov, T Wang, NM Alford, ... Nano letters 14 (7), 3864-3868, 2014 | 276 | 2014 |
| Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films NK Ponon, DJR Appleby, E Arac, PJ King, S Ganti, KSK Kwa, A O'Neill Thin Solid Films 578, 31-37, 2015 | 228 | 2015 |
| Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ... Journal of Applied Physics 97 (8), 2005 | 204 | 2005 |
| Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation C Fiegna, Y Yang, E Sangiorgi, AG O'Neill IEEE Transactions on Electron Devices 55 (1), 233-244, 2007 | 171 | 2007 |
| The sinusoidal probe: a new approach to improve electrode longevity HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ... Frontiers in neuroengineering 7, 10, 2014 | 129 | 2014 |
| A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ... Semiconductor science and technology 18 (2), 82, 2002 | 125 | 2002 |
| Deep submicron CMOS based on silicon germanium technology AG O'Neill, DA Antoniadis IEEE Transactions on Electron Devices 43 (6), 911-918, 1996 | 103 | 1996 |
| Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ... Semiconductor Science and Technology 20 (3), 271, 2005 | 98 | 2005 |
| Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ... IEEE Transactions on Electron Devices 53 (5), 1142-1152, 2006 | 95 | 2006 |
| High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ... IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003 | 92 | 2003 |
| Genomewide linkage scan of schizophrenia in a large multicenter pedigree sample using single nucleotide polymorphisms PA Holmans, B Riley, AE Pulver, MJ Owen, DB Wildenauer, PV Gejman, ... Molecular psychiatry 14 (8), 786-795, 2009 | 85 | 2009 |
| No linkage or linkage disequilibrium between brain-derived neurotrophic factor (BDNF) dinucleotide repeat polymorphism and schizophrenia in Irish families Z Hawi, RE Straub, A O'Neill, KS Kendler, D Walsh, M Gill Psychiatry research 81 (2), 111-116, 1998 | 78 | 1998 |
| Multicenter linkage study of schizophrenia loci on chromosome 22q BJ Mowry, PA Holmans, AE Pulver, PV Gejman, B Riley, NM Williams, ... Molecular psychiatry 9 (8), 784-795, 2004 | 75 | 2004 |
| Mechanical flexibility reduces the foreign body response to long-term implanted microelectrodes in rabbit cortex HS Sohal, GJ Clowry, A Jackson, A O’Neill, SN Baker PloS one 11 (10), e0165606, 2016 | 73 | 2016 |
| A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor SA Mojarad, KSK Kwa, JP Goss, Z Zhou, NK Ponon, DJR Appleby, ... Journal of Applied Physics 111 (1), 2012 | 69 | 2012 |
| No association or linkage between the 5‐HT2a/T102C polymorphism and schizophrenia in Irish families Z Hawi, MV Myakishev, RE Straub, A O'Neill, KS Kendler, D Walsh, M Gill American journal of medical genetics 74 (4), 370-373, 1997 | 69 | 1997 |
| Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ... 2007 IEEE International Electron Devices Meeting, 191-194, 2007 | 60 | 2007 |
| Device and circuit performance of SiGe/Si MOSFETs SG Badcock, AG O’Neill, EG Chester Solid-State Electronics 46 (11), 1925-1932, 2002 | 58 | 2002 |
| Top-down fabrication of single crystal silicon nanowire using optical lithography NF Za’bah, KSK Kwa, L Bowen, B Mendis, A O’Neill Journal of applied physics 112 (2), 2012 | 53 | 2012 |
| A new version of crystal field theory and its application to ZnSe: Co AG O'neill, JW Allen Solid state communications 46 (11), 833-836, 1983 | 52 | 1983 |
