| Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs I Rossetto, M Meneghini, A Tajalli, S Dalcanale, C De Santi, P Moens, ... IEEE transactions on electron devices 64 (9), 3734-3739, 2017 | 133 | 2017 |
| Reliability and failure analysis in power GaN-HEMTs: An overview M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017 | 125 | 2017 |
| Trapping phenomena and degradation mechanisms in GaN-based power HEMTs M Meneghini, A Tajalli, P Moens, A Banerjee, E Zanoni, G Meneghesso Materials Science in Semiconductor Processing 78, 118-126, 2018 | 121 | 2018 |
| On the origin of the leakage current in p-gate AlGaN/GaN HEMTs A Stockman, E Canato, A Tajalli, M Meneghini, G Meneghesso, E Zanoni, ... 2018 IEEE international reliability physics symposium (IRPS), 4B. 5-1-4B. 5-4, 2018 | 64 | 2018 |
| Vertical breakdown of GaN on Si due to V-pits S Besendörfer, E Meissner, A Tajalli, M Meneghini, JA Freitas, J Derluyn, ... Journal of Applied Physics 127 (1), 2020 | 35 | 2020 |
| An analysis of the initiation of upward flashes from tall towers with particular reference to Gaisberg and Säntis Towers A Smorgonskiy, A Tajalli, F Rachidi, M Rubinstein, G Diendorfer, H Pichler Journal of Atmospheric and Solar-Terrestrial Physics 136, 46-51, 2015 | 30 | 2015 |
| Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors A Tajalli, E Canato, A Nardo, M Meneghini, A Stockman, P Moens, ... Microelectronics Reliability 88, 572-576, 2018 | 29 | 2018 |
| Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: An industry perspective P Moens, A Banerjee, A Constant, P Coppens, M Caesar, Z Li, ... ECS Transactions 72 (4), 65, 2016 | 28 | 2016 |
| High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications A Tajalli, M Meneghini, S Besendörfer, R Kabouche, I Abid, R Püsche, ... Materials 13 (19), 4271, 2020 | 23 | 2020 |
| The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors A Stockman, A Tajalli, M Meneghini, MJ Uren, S Mouhoubi, S Gerardin, ... IEEE Transactions on Electron Devices 66 (1), 372-377, 2018 | 23 | 2018 |
| Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation M Meneghini, A Tajalli, P Moens, A Banerjee, A Stockman, M Tack, ... 2017 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2017 | 21 | 2017 |
| Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron A Stockman, M Uren, A Tajalli, M Meneghini, B Bakeroot, P Moens 2017 47th European Solid-State Device Research Conference (ESSDERC), 130-133, 2017 | 21 | 2017 |
| GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift S Dalcanale, M Meneghini, A Tajalli, I Rossetto, M Ruzzarin, E Zanoni, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-1.1-4B-1.5, 2017 | 19 | 2017 |
| Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures R Kabouche, I Abid, R Püsche, J Derluyn, S Degroote, M Germain, ... physica status solidi (a) 217 (7), 1900687, 2020 | 13 | 2020 |
| Analysis of lightning events preceding upward flashes from Gaisberg and Säntis Towers A Smorgonskiy, A Tajalli, F Rachidi, M Rubinstein, G Diendorfer, H Pichler 2014 International Conference on Lightning Protection (ICLP), 1382-1385, 2014 | 10 | 2014 |
| Field and hot electron-induced degradation in GaN-based power MIS-HEMTs A Tajalli, M Meneghini, I Rossetto, P Moens, A Banerjee, E Zanoni, ... Microelectronics Reliability 76, 282-286, 2017 | 9 | 2017 |
| Dynamic-ron control via proton irradiation in AlGaN/GaN transistors A Tajalli, A Stockman, M Meneghini, S Mouhoubi, A Banerjee, S Gerardin, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 8 | 2018 |
| Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment A Tajalli, M Borga, M Meneghini, C De Santi, D Benazzi, S Besendörfer, ... Micromachines 11 (1), 101, 2020 | 5 | 2020 |
| Degradation physics of GaN-based lateral and vertical devices M Meneghini, C De Santi, A Barbato, M Borga, E Canato, F Chiocchetta, ... Gallium Nitride Materials and Devices XIV 10918, 63-72, 2019 | 1 | 2019 |
| Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V A Tajalli, M Meneghini, G Meneghesso, R Kabouche, I Abid, M Zegaoui, ... 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits …, 2019 | | 2019 |