Continuous germanene layer on Al (111) M Derivaz, D Dentel, R Stephan, MC Hanf, A Mehdaoui, P Sonnet, C Pirri
Nano letters 15 (4), 2510-2516, 2015
703 2015 Germanene on Al (111): interface electronic states and charge transfer R Stephan, MC Hanf, M Derivaz, D Dentel, MC Asensio, J Avila, ...
The Journal of Physical Chemistry C 120 (3), 1580-1585, 2016
65 2016 Si adatom surface migration biasing by elastic strain gradients during capping of Ge or L Kubler, D Dentel, JL Bischoff, C Ghica, C Ulhaq-Bouillet, J Werckmann
Applied physics letters 73 (8), 1053-1055, 1998
45 1998 Resonant Raman scattering by acoustic phonons in self-assembled quantum-dot multilayers: From a few layers to superlattices M Cazayous, J Groenen, A Zwick, A Mlayah, R Carles, JL Bischoff, ...
Physical Review B 66 (19), 195320, 2002
41 2002 Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1− xGex morphologies: a RHEED and TEM study D Dentel, JL Bischoff, L Kubler, J Werckmann, M Romeo
Journal of crystal growth 191 (4), 697-710, 1998
37 1998 Grafting process of ethyltrimethoxysilane and polyphosphoric acid on calcium carbonate surface J Kiehl, C Ben-Azzouz, D Dentel, M Derivaz, JL Bischoff, C Delaite, ...
Applied surface science 264, 864-871, 2013
32 2013 The influence of hydrogen during the growth of Ge films on Si (001) by solid source molecular beam epitaxy D Dentel, JL Bischoff, T Angot, L Kubler
Surface science 402, 211-214, 1998
32 1998 Bidimensional intercalation of Ge between SiC (0001) and a heteroepitaxial graphite top layer L Kubler, K Aït-Mansour, M Diani, D Dentel, JL Bischoff, M Derivaz
Physical Review B—Condensed Matter and Materials Physics 72 (11), 115319, 2005
30 2005 Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor R Loo, P Meunier-Beillard, D Vanhaeren, H Bender, M Caymax, ...
Journal of Applied Physics 90 (5), 2565-2574, 2001
29 2001 Tip-induced switch of germanene atomic structure R Stephan, M Derivaz, MC Hanf, D Dentel, N Massara, A Mehdaoui, ...
The Journal of Physical Chemistry Letters 8 (18), 4587-4593, 2017
25 2017 Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si (001) D Dentel, JL Bischoff, L Kubler, M Stoffel, G Castelein
Journal of applied physics 93 (9), 5069-5074, 2003
23 2003 Determination of interface state density of PtSi/strained-Si1-x Gex /Si Schottky diodes S Chattopadhyay, LK Bera, CK Maiti, SK Ray, PK Bose, D Dentel, ...
Journal of Materials Science: Materials in Electronics 9, 403-407, 1998
22 1998 6H-SiC {0001} X-ray photoelectron diffraction characterization used for polarity determination JL Bischoff, D Dentel, L Kubler
Surface science 415 (3), 392-402, 1998
19 1998 Two dimensional Si layer epitaxied on LaAlO3 (111) substrate: RHEED and XPS investigations CB Azzouz, A Akremi, M Derivaz, JL Bischoff, M Zanouni, D Dentel
Journal of Physics: Conference Series 491 (1), 012003, 2014
16 2014 Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3 (0 0 1) H Mortada, D Dentel, M Derivaz, JL Bischoff, E Denys, R Moubah, ...
Journal of crystal growth 323 (1), 247-249, 2011
15 2011 Si epitaxial growth on LaAlO3 (0 0 1) H Mortada, M Derivaz, D Dentel, H Srour, JL Bischoff
Surface science 603 (9), L66-L69, 2009
11 2009 Structural investigation of the LaAlO3 (110) surface H Mortada, M Derivaz, D Dentel, JL Bischoff
Thin Solid Films 517 (1), 441-443, 2008
11 2008 Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC (0 0 0 1) K Aıt-Mansour, D Dentel, JL Bischoff, L Kubler, M Diani, A Barski, ...
Physica E: Low-dimensional Systems and Nanostructures 23 (3-4), 428-434, 2004
11 2004 Influence of the surface-termination of hexagonal SiC (0 0 0 1) on the temperature dependences of Ge growth modes and desorption K Aıt-Mansour, L Kubler, D Dentel, JL Bischoff, M Diani, G Feuillet
Surface science 546 (1), 1-11, 2003
11 2003 Influence of molecular hydrogen on Ge island nucleation on Si (001) D Dentel, L Vescan, O Chrétien, B Holländer
Journal of applied physics 88 (9), 5113-5118, 2000
11 2000 
Carmelo PirriUniversité de Haute AlsaceAdresse e-mail validée de uha.fr