Zlatko Sitar

Citée par

	Toutes	Depuis 2019
Citations	16174	7867
indice h	66	40
indice i10	276	168

1500

750

375

1125

19921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202120222023202460 99 95 115 141 145 199 145 145 130 151 144 200 225 229 250 238 234 272 265 342 521 623 707 686 894 898 960 1290 1461 1457 1428 1266

Accès public

Tout afficher

124 articles

11 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Ramon CollazoProfessor of Materials Science and Engineering, NCSUAdresse e-mail validée de ncsu.edu
Ronny KirsteResearch associate, NCSUAdresse e-mail validée de ncsu.edu
Raoul SchlesserHexaTech, Inc.Adresse e-mail validée de hexatechinc.com
Pramod ReddyAdroit Materials, North Carolina State UniversityAdresse e-mail validée de ncsu.edu
Robert F. DavisCarnegie Mellon UniversityAdresse e-mail validée de andrew.cmu.edu
Jinqiao XieQorvo IncAdresse e-mail validée de qorvo.com
Douglas L IrvingNorth Carolina State UniversityAdresse e-mail validée de ncsu.edu
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinAdresse e-mail validée de tu-berlin.de
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)Adresse e-mail validée de stonybrook.edu
HS CraftNorth Carolina State University, HexaTechAdresse e-mail validée de hexatechinc.com
Balaji RaghothamacharStony Brook UniversityAdresse e-mail validée de stonybrook.edu
Benjamin E. GaddyClean Energy TrustAdresse e-mail validée de bengaddy.com
Robert J. NemanichDepartment of Physics, Arizona State UniversityAdresse e-mail validée de asu.edu
Michal BockowskiInstitute of High Pressure Physics PASAdresse e-mail validée de unipress.waw.pl
Colin WoldenProfessor of Chemical and Biological Engineering, Colorado School of MinesAdresse e-mail validée de mines.edu
Dietz NikolausGeorgia State UniversityAdresse e-mail validée de gsu.edu
Mark D. LosegoGeorgia TechAdresse e-mail validée de gatech.edu
Ziad HerroLebanese UniversityAdresse e-mail validée de ul.edu.lb
Martin FenebergResearcher, Otto von Guericke University MagdeburgAdresse e-mail validée de ovgu.de
Gordon CallsenUniversity of Bremen, Institute of Solid State PhysicsAdresse e-mail validée de ifp.uni-bremen.de

Suivre

Zlatko Sitar

Kobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina State

Adresse e-mail validée de ncsu.edu

thin films semiconductors crystal growth optoelectronic devices electronic devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	1343	2018
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989	506	1989
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	447	2020
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ... Materials Science and Engineering: B 1 (1), 77-104, 1988	282	1988
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar physica status solidi c 8 (7‐8), 2031-2033, 2011	214	2011
On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012	194	2012
Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen Scientific reports 3 (1), 2963, 2013	188	2013
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011	177	2011
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 2015	171	2015
Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009	169	2009
Seeded growth of AlN bulk single crystals by sublimation R Schlesser, R Dalmau, Z Sitar Journal of crystal growth 241 (4), 416-420, 2002	165	2002
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar Journal of Crystal Growth 438, 81-89, 2016	163	2016
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar Journal of Applied Physics 108 (4), 2010	163	2010
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy Z Sitar, MJ Paisley, B Yan, J Ruan, WJ Choyke, RF Davis Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990	161	1990
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012	155	2012
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012	155	2012
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ... Applied Physics Express 6 (9), 092103, 2013	154	2013
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar Journal of Applied Physics 104 (1), 2008	151	2008
The role of surface kinetics on composition and quality of AlGaN I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ... Journal of Crystal Growth 451, 65-71, 2016	144	2016
Growth of AlN single crystalline boules ZG Herro, D Zhuang, R Schlesser, Z Sitar Journal of Crystal Growth 312 (18), 2519-2521, 2010	144	2010

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs