Electronic switching in phase-change memories A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, R Bez
IEEE Transactions on Electron Devices 51 (3), 452-459, 2004
774 2004 Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004
550 2004 Reliability study of phase-change nonvolatile memories A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004
509 2004 Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez
IEEE Transactions on Electron Devices 51 (5), 714-719, 2004
452 2004 Electronic switching effect and phase-change transition in chalcogenide materials A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez
IEEE Electron Device Letters 25 (10), 684-686, 2004
365 2004 Scaling analysis of phase-change memory technology A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez
IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003
356 2003 Electrothermal and phase-change dynamics in chalcogenide-based memories AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
335 2004 Non-volatile memory technologies: emerging concepts and new materials R Bez, A Pirovano
Materials Science in Semiconductor Processing 7 (4-6), 349-355, 2004
316 2004 Threshold switching and phase transition numerical models for phase change memory simulations A Redaelli, A Pirovano, A Benvenuti, AL Lacaita
Journal of Applied Physics 103 (11), 2008
275 2008 Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...
Frontiers in neuroscience 10, 56, 2016
249 2016 4-Mb MOSFET-selected phase-change memory experimental chip F Bedeschi, R Bez, C Boffino, E Bonizzoni, E Buda, G Casagrande, ...
Proceedings of the 30th European Solid-State Circuits Conference, 207-210, 2004
237 2004 An 8Mb demonstrator for high-density 1.8 V phase-change memories F Bedeschi, C Resta, O Khouri, E Buda, L Costa, M Ferraro, F Pellizzer, ...
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004
200 2004 A 90nm phase change memory technology for stand-alone non-volatile memory applications F Pellizzer, A Benvenuti, B Gleixner, Y Kim, B Johnson, M Magistretti, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 122-123, 2006
178 2006 4-Mb MOSFET-selected/spl mu/trench phase-change memory experimental chip F Bedeschi, R Bez, C Boffino, E Bonizzoni, EC Buda, G Casagrande, ...
IEEE journal of solid-state circuits 40 (7), 1557-1565, 2005
147 2005 Analysis of phase distribution in phase-change nonvolatile memories D Ielmini, AL Lacaita, A Pirovano, F Pellizzer, R Bez
IEEE Electron Device Letters 25 (7), 507-509, 2004
144 2004 Amorphization dynamics of Ge2Sb2Te5 films upon nano-and femtosecond laser pulse irradiation J Siegel, W Gawelda, D Puerto, C Dorronsoro, J Solis, CN Afonso, ...
Journal of Applied Physics 103 (2), 2008
116 2008 Statistics of resistance drift due to structural relaxation in phase-change memory arrays M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano
IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010
112 2010 A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer
Journal of Applied Physics 105 (8), 2009
101 2009 Crystallization and phase separation in thin films S Privitera, E Rimini, C Bongiorno, R Zonca, A Pirovano, R Bez
Journal of applied physics 94 (7), 4409-4413, 2003
95 2003 On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs A Pirovano, AL Lacaita, G Ghidini, G Tallarida
IEEE Electron Device Letters 21 (1), 34-36, 2000
90 2000