Mark Lundstrom

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Supriyo DattaProfessor, Purdue UniversityAdresse e-mail validée de purdue.edu
Jing GuoProfessor, University of FloridaAdresse e-mail validée de ufl.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingAdresse e-mail validée de intel.com
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC BerkeleyAdresse e-mail validée de berkeley.edu
Jesse MaassenAssociate Professor of Physics, Dalhousie UniversityAdresse e-mail validée de dal.ca
Neophytos NeophytouSchool of Engineering, University of WarwickAdresse e-mail validée de warwick.ac.uk
Changwook JeongAssociate Professor, Graduate School of Semicondutor Materials and Devices Engineering, UNISTAdresse e-mail validée de unist.ac.kr
Hongjie DaiProfessor of chemistry, stanford universityAdresse e-mail validée de stanford.edu
Jing WangNVIDIA CorporationAdresse e-mail validée de nvidia.com
Xufeng WangPurdue UniversityAdresse e-mail validée de purdue.edu
RASEONG KIMIntel CorporationAdresse e-mail validée de intel.com
Jeffery L. GrayAssociate Professor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U SingaporeAdresse e-mail validée de us.ibm.com
Mathieu LuisierETH ZurichAdresse e-mail validée de iis.ee.ethz.ch
James E. MooreSolAero TechnologiesAdresse e-mail validée de rocketlabusa.com
Richard AhrenkielFellow Emeritus, National Renewable Energy LaboratoryAdresse e-mail validée de nrel.gov
M. P. AnantramUniversity of WashingtonAdresse e-mail validée de uw.edu
Gengchiau LiangNational Yang Ming Chiao Tung UniversityAdresse e-mail validée de nycu.edu.tw

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Mark Lundstrom

Professor of Electrical and Computer Engineering, Purdue University

Adresse e-mail validée de purdue.edu - Page d'accueil

electronic devices and materials


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Ballistic carbon nanotube field-effect transistors A Javey, J Guo, Q Wang, M Lundstrom, H Dai nature 424 (6949), 654-657, 2003	4111	2003
Fundamentals of carrier transport, 2nd edn M Lundstrom Measurement Science and Technology 13 (2), 230-230, 2002	2516	2002
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002	1428	2002
Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ... Nano letters 12 (2), 758-762, 2012	1144	2012
Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003	988	2003
High-field quasiballistic transport in short carbon nanotubes A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai Physical Review Letters 92 (10), 106804, 2004	804	2004
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ... Nano Letters 4 (3), 447-450, 2004	784	2004
Elementary scattering theory of the Si MOSFET M Lundstrom IEEE Electron Device Letters 18 (7), 361-363, 1997	782	1997
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ... Nano letters 4 (7), 1319-1322, 2004	757	2004
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Mark S. Lundstrom, Peide D ... Nature Comm. 6, 2015	729	2015
Essential physics of carrier transport in nanoscale MOSFETs M Lundstrom, Z Ren IEEE Transactions on Electron Devices 49 (1), 133-141, 2002	724	2002
Moore's law forever? M Lundstrom Science 299 (5604), 210-211, 2003	719	2003
Nanoscale transistors: device physics, modeling and simulation M Lundstrom, J Guo Springer Science & Business Media, 2006	594	2006
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches R Venugopal, Z Ren, S Datta, MS Lundstrom, D Jovanovic Journal of Applied physics 92 (7), 3730-3739, 2002	583	2002
Performance comparison between pin tunneling transistors and conventional MOSFETs SO Koswatta, MS Lundstrom, DE Nikonov IEEE Transactions on Electron Devices 56 (3), 456-465, 2009	490	2009
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation J Wang, E Polizzi, M Lundstrom Journal of Applied Physics 96 (4), 2192-2203, 2004	454	2004
Modeling of nanoscale devices MP Anantram, MS Lundstrom, DE Nikonov Proceedings of the IEEE 96 (9), 1511-1550, 2008	436	2008
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors J Guo, S Datta, M Lundstrom IEEE transactions on electron devices 51 (2), 172-177, 2004	402	2004
Performance projections for ballistic carbon nanotube field-effect transistors J Guo, M Lundstrom, S Datta Applied physics letters 80 (17), 3192-3194, 2002	395	2002
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs Z Ren, R Venugopal, S Goasguen, S Datta, MS Lundstrom IEEE Transactions on Electron Devices 50 (9), 1914-1925, 2003	376	2003

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