| High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer J Wang, Q Yao, CW Huang, X Zou, L Liao, S Chen, Z Fan, K Zhang, W Wu, ... Advanced materials 28 (37), 8302-8308, 2016 | 518 | 2016 |
| Observation of atomic diffusion at twin-modified grain boundaries in copper KC Chen, WW Wu, CN Liao, LJ Chen, KN Tu Science 321 (5892), 1066-1069, 2008 | 416 | 2008 |
| Dynamic evolution of conducting nanofilament in resistive switching memories JY Chen, CL Hsin, CW Huang, CH Chiu, YT Huang, SJ Lin, WW Wu, ... Nano letters 13 (8), 3671-3677, 2013 | 411 | 2013 |
| Interface engineering for high-performance top-gated MoS2 field effect transistors L Liao, X Zou 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 356 | 2014 |
| Thermal stability and performance of NbSiTaTiZr high-entropy alloy barrier for copper metallization MH Tsai, CW Wang, CW Tsai, WJ Shen, JW Yeh, JY Gan, WW Wu Journal of the Electrochemical Society 158 (11), H1161, 2011 | 258 | 2011 |
| Identification of Cu(100)/Cu(111) Interfaces as Superior Active Sites for CO Dimerization During CO2 Electroreduction ZZ Wu, XL Zhang, ZZ Niu, FY Gao, PP Yang, LP Chi, L Shi, WS Wei, R Liu, ... Journal of the American Chemical Society 144 (1), 259-269, 2021 | 253 | 2021 |
| Flexible ferroelectric element based on van der Waals heteroepitaxy J Jiang, Y Bitla, CW Huang, TH Do, HJ Liu, YH Hsieh, CH Ma, CY Jang, ... Science Advances 3 (6), e1700121, 2017 | 219 | 2017 |
| Switching kinetic of VCM‐based memristor: evolution and positioning of nanofilament JY Chen, CW Huang, CH Chiu, YT Huang, WW Wu Advanced Materials 27 (34), 5028-5033, 2015 | 218 | 2015 |
| Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices YC Lin, KC Lu, WW Wu, J Bai, LJ Chen, KN Tu, Y Huang Nano letters 8 (3), 913-918, 2008 | 209 | 2008 |
| In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction KC Lu, WW Wu, HW Wu, CM Tanner, JP Chang, LJ Chen, KN Tu Nano letters 7 (8), 2389-2394, 2007 | 162 | 2007 |
| Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor VQ Le, TH Do, JRD Retamal, PW Shao, YH Lai, WW Wu, JH He, ... Nano Energy 56, 322-329, 2019 | 143 | 2019 |
| Well-aligned ZnO nanowires with excellent field emission and photocatalytic properties FH Chu, CW Huang, CL Hsin, CW Wang, SY Yu, PH Yeh, WW Wu Nanoscale 4 (5), 1471-1475, 2012 | 139 | 2012 |
| In-situ TEM Observation of Repeating Events of Nucleation in Epitaxial Growth of Nano CoSi2 in Nanowires of Si YC Chou, WW Wu, SL Cheng, BY Yoo, N Myung, LJ Chen, KN Tu Nano letters 8 (8), 2194-2199, 2008 | 119 | 2008 |
| Facile synthesis of mesoporous NiFe2O4/CNTs nanocomposite cathode material for high performance asymmetric pseudocapacitors N Kumar, A Kumar, GM Huang, WW Wu, TY Tseng Applied Surface Science 433, 1100-1112, 2018 | 115 | 2018 |
| In situ growth of copper oxide-graphite carbon nitride nanocomposites with peroxidase-mimicking activity for electrocatalytic and colorimetric detection of hydrogen peroxide J Zhu, W Nie, Q Wang, J Li, H Li, W Wen, T Bao, H Xiong, X Zhang, ... Carbon 129, 29-37, 2018 | 110 | 2018 |
| Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5-Based Memristors. CF Chang, JY Chen, CW Huang, CH Chiu, TY Lin, PH Yeh, WW Wu Small (Weinheim an der Bergstrasse, Germany) 13 (15), 2017 | 103 | 2017 |
| Synthesis of taperlike Si nanowires with strong field emission YL Chueh, LJ Chou, SL Cheng, JH He, WW Wu, LJ Chen Applied Physics Letters 86 (13), 2005 | 100 | 2005 |
| Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high‐performance 2D field effect transistors X Zou, CW Huang, L Wang, LJ Yin, W Li, J Wang, B Wu, Y Liu, Q Yao, ... Advanced Materials 28 (10), 2062-2069, 2016 | 91 | 2016 |
| Supercritical CO2‐Assisted SiOx/Carbon Multi‐Layer Coating on Si Anode for Lithium‐Ion Batteries RFH Hernandha, PC Rath, B Umesh, J Patra, CY Huang, WW Wu, ... Advanced Functional Materials 31 (40), 2104135, 2021 | 90 | 2021 |
| Oxide heteroepitaxy for flexible optoelectronics Y Bitla, C Chen, HC Lee, TH Do, CH Ma, LV Qui, CW Huang, WW Wu, ... ACS Applied Materials & Interfaces 8 (47), 32401-32407, 2016 | 90 | 2016 |
