Homoepitaxial gallium-nitride-based light emitting device and method for producing MP D'evelyn, NA Evers, SF Leboeuf, XA Cao, AP Zhang
US Patent 7,053,413, 2006
495 2006 Resonant cavity light emitting devices and associated method MP D'evelyn, XA Cao, A Zhang, SF Leboeuf, H Hong, DS Park, KJ Narang
US Patent 7,582,498, 2009
346 2009 Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes XA Cao, EB Stokes, PM Sandvik, SF LeBoeuf, J Kretchmer, D Walker
IEEE Electron Device Letters 23 (9), 535-537, 2002
287 2002 Electrical effects of plasma damage in XA Cao, SJ Pearton, AP Zhang, GT Dang, F Ren, RJ Shul, L Zhang, ...
Applied physics letters 75 (17), 2569-2571, 1999
261 1999 Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses XA Cao, PM Sandvik, SF LeBoeuf, SD Arthur
Microelectronics Reliability 43 (12), 1987-1991, 2003
203 2003 Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates MP D'evelyn, XA Cao, A Zhang, SF Leboeuf, H Hong, DS Park, KJ Narang
US Patent 7,009,215, 2006
190 2006 Depth and thermal stability of dry etch damage in GaN Schottky diodes XA Cao, H Cho, SJ Pearton, GT Dang, AP Zhang, F Ren, RJ Shul, ...
Applied physics letters 75 (2), 232-234, 1999
182 1999 High-power and reliable operation of vertical light-emitting diodes on bulk GaN XA Cao, SD Arthur
Applied physics letters 85 (18), 3971-3973, 2004
177 2004 Flip-chip light emitting diode EB Stokes, MP D'evelyn, SE Weaver, PM Sandvik, AU Ebong, XA Cao, ...
US Patent 7,119,372, 2006
170 2006 Electrical characteristics of InGaN∕ GaN light-emitting diodes grown on GaN and sapphire substrates XA Cao, JM Teetsov, MP D’evelyn, DW Merfeld, CH Yan
Applied Physics Letters 85 (1), 7-9, 2004
169 2004 Microstructural origin of leakage current in GaN/InGaN light-emitting diodes XA Cao, JA Teetsov, F Shahedipour-Sandvik, SD Arthur
Journal of crystal growth 264 (1-3), 172-177, 2004
158 2004 Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes Y Yang, XA Cao, C Yan
IEEE transactions on electron devices 55 (7), 1771-1775, 2008
152 2008 Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes XA Cao, SF LeBoeuf, LB Rowland, CH Yan, H Liu
Applied Physics Letters 82 (21), 3614-3616, 2003
151 2003 Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates XA Cao, SF LeBoeuf, MP D’evelyn, SD Arthur, J Kretchmer, CH Yan, ...
Applied physics letters 84 (21), 4313-4315, 2004
144 2004 GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
134 2001 High voltage GaN schottky rectifiers GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ...
IEEE Transactions on Electron Devices 47 (4), 692-696, 2000
119 2000 Effects of interfacial oxides on Schottky barrier contacts to n - and p -type GaN XA Cao, SJ Pearton, G Dang, AP Zhang, F Ren, JM Van Hove
Applied Physics Letters 75 (26), 4130-4132, 1999
115 1999 Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor J Han, AG Baca, RJ Shul, CG Willison, L Zhang, F Ren, AP Zhang, ...
Applied physics letters 74 (18), 2702-2704, 1999
115 1999 Ultrahigh XA Cao, CR Abernathy, RK Singh, SJ Pearton, M Fu, V Sarvepalli, ...
Applied physics letters 73 (2), 229-231, 1998
93 1998 Semiconductor devices and methods of manufacture XA Cao, S Arthur
US Patent App. 11/263,163, 2007
89 2007 