A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
648 2016 Ballistic interferences in suspended graphene P Rickhaus, R Maurand, MH Liu, M Weiss, K Richter, C Schönenberger
Nature communications 4 (1), 2342, 2013
230 2013 Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ...
Nature communications 10 (1), 2776, 2019
151 2019 Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...
Nature nanotechnology 14 (8), 737-741, 2019
150 2019 Electrical Spin Driving by A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
146 2018 Snake trajectories in ultraclean graphene p–n junctions P Rickhaus, P Makk, MH Liu, E Tóvári, M Weiss, R Maurand, K Richter, ...
Nature communications 6 (1), 6470, 2015
136 2015 Electrical Control of g -Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2016
115 2016 Nonlocal spectroscopy of Andreev bound states J Schindele, A Baumgartner, R Maurand, M Weiss, C Schönenberger
Physical Review B 89 (4), 045422, 2014
115 2014 First-Order R Maurand, T Meng, E Bonet, S Florens, L Marty, W Wernsdorfer
Physical Review X 2 (1), 011009, 2012
115 2012 Scalable tight-binding model for graphene MH Liu, P Rickhaus, P Makk, E Tóvári, R Maurand, F Tkatschenko, ...
Physical review letters 114 (3), 036601, 2015
113 2015 Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
111 2018 Guiding of electrons in a few-mode ballistic graphene channel P Rickhaus, MH Liu, P Makk, R Maurand, S Hess, S Zihlmann, M Weiss, ...
Nano letters 15 (9), 5819-5825, 2015
92 2015 19.2 A 110mK 295µW 28nm FDSOI CMOS quantum integrated circuit with a 2.8 GHz excitation and nA current sensing of an on-chip double quantum dot L Le Guevel, G Billiot, X Jehl, S De Franceschi, M Zurita, Y Thonnart, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 306-308, 2020
85 2020 A single hole spin with enhanced coherence in natural silicon N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
84 2022 Germanium quantum-well Josephson field-effect transistors and interferometers F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ...
Nano letters 19 (2), 1023-1027, 2019
79 2019 Charge detection in an array of CMOS quantum dots E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...
Physical Review Applied 14 (2), 024066, 2020
76 2020 Strong coupling between a photon and a hole spin in silicon CX Yu, S Zihlmann, JC Abadillo-Uriel, VP Michal, N Rambal, ...
Nature Nanotechnology 18 (7), 741-746, 2023
74 2023 Large-scale fabrication of BN tunnel barriers for graphene spintronics W Fu, P Makk, R Maurand, M Bräuninger, C Schönenberger
Journal of applied physics 116 (7), 2014
64 2014 Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing BC Paz, L Le Guevel, M Casse, G Billiot, G Pillonnet, AGM Jansen, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
53 2020 SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016
52 2016