| Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon<? format?> Field-Effect Transistors X Wang, Y Ouyang, X Li, H Wang, J Guo, H Dai Physical review letters 100 (20), 206803, 2008 | 1924 | 2008 |
| Performance limits of monolayer transition metal dichalcogenide transistors L Liu, SB Kumar, Y Ouyang, J Guo IEEE Transactions on Electron Devices 58 (9), 3042-3047, 2011 | 609 | 2011 |
| A theoretical study on thermoelectric properties of graphene nanoribbons Y Ouyang, J Guo Applied Physics Letters 94 (26), 2009 | 293 | 2009 |
| Controlled chlorine plasma reaction for noninvasive graphene doping J Wu, L Xie, Y Li, H Wang, Y Ouyang, J Guo, H Dai Journal of the American Chemical Society 133 (49), 19668-19671, 2011 | 267 | 2011 |
| Graphene nanoribbons with smooth edges behave as quantum wires X Wang, Y Ouyang, L Jiao, H Wang, L Xie, J Wu, J Guo, H Dai Nature nanotechnology 6 (9), 563-567, 2011 | 212 | 2011 |
| Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study Y Ouyang, Y Yoon, J Guo IEEE Transactions on Electron Devices 54 (9), 2223-2231, 2007 | 198 | 2007 |
| Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors Y Ouyang, Y Yoon, JK Fodor, J Guo Applied Physics Letters 89 (20), 2006 | 179 | 2006 |
| Gate electrostatics and quantum capacitance of graphene nanoribbons J Guo, Y Yoon, Y Ouyang Nano Letters 7 (7), 1935-1940, 2007 | 129 | 2007 |
| Carrier scattering in graphene nanoribbon field-effect transistors Y Ouyang, X Wang, H Dai, J Guo Applied Physics Letters 92 (24), 2008 | 61 | 2008 |
| Analysis of ballistic monolayer and bilayer graphene field-effect transistors Y Ouyang, P Campbell, J Guo Applied Physics Letters 92 (6), 2008 | 56 | 2008 |
| Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material Y Ouyang, H Dai, J Guo Nano Research 3, 8-15, 2010 | 49 | 2010 |
| Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs Y Yoon, Y Ouyang, J Guo IEEE Transactions on Electron Devices 53 (10), 2467-2470, 2006 | 48 | 2006 |
| Heat dissipation in carbon nanotube transistors Y Ouyang, J Guo Applied Physics Letters 89 (18), 2006 | 36 | 2006 |
| Effects of edge chemistry doping on graphene nanoribbon mobility Y Ouyang, S Sanvito, J Guo Surface science 605 (17-18), 1643-1648, 2011 | 32 | 2011 |
| Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors Y Chen, Y Ouyang, J Guo, TX Wu Applied Physics Letters 89 (20), 2006 | 30 | 2006 |
| Carbon-based nanomaterials as contacts to graphene nanoribbons Y Ouyang, J Guo Applied Physics Letters 97 (26), 2010 | 18 | 2010 |
| Spin-polarized edge and transport in graphene nanoscale junctions J Guo, Y Ouyang Applied Physics Letters 94 (24), 2009 | 18 | 2009 |
| Edge chemistry engineering of graphene nanoribbon transistors: A computational study Y Ouyang, Y Yoon, J Guo 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 13 | 2008 |
| Subband gap impact ionization and excitation in carbon nanotube transistors J Guo, MA Alam, Y Ouyang Journal of applied physics 101 (6), 2007 | 11 | 2007 |
| Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation Y Ouyang, J Guo Solid-state electronics 61 (1), 18-22, 2011 | 9 | 2011 |
