Yuji Yamamoto

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Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinAdresse e-mail validée de ikz-berlin.de
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsAdresse e-mail validée de uniroma3.it
Holger RückerIHP, Innovations for High Performance MicroelelectronicsAdresse e-mail validée de ihp-microelectronics.com
Marco LiskerIHPAdresse e-mail validée de ihp-microelectronics.com
Lars ZimmermannTechnische Universitaet Berlin and IHPAdresse e-mail validée de ihp-microelectronics.com
Michele VirgilioPhysics Department, Pisa UniversityAdresse e-mail validée de df.unipi.it
Jaroslaw DabrowskiIHPAdresse e-mail validée de ihp-microelectronics.com
Dr. -Ing Mehmet KaynakDr. -IngAdresse e-mail validée de ti.com
Francesco MontalentiUniversità di Milano-BicoccaAdresse e-mail validée de unimib.it
Tobias SchülliESRF Scientist in charge of Beamline ID01; Deputy Group Head of the X-ray Nanoprobe groupAdresse e-mail validée de esrf.fr
Oliver SkibitzkiIHP-Innovation for High Performance Microelectronics
Grzegorz Lupina

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Yuji Yamamoto

IHP

Adresse e-mail validée de ihp-microelectronics.com

CVD Epitaxy Si SiGe Ge


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
SiGe HBT technology with f_T/f_max of 300GHz/500GHz and 2.0 ps CML gate delay B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ... 2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010	314	2010
Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz S Lischke, A Peczek, JS Morgan, K Sun, D Steckler, Y Yamamoto, ... Nature Photonics 15 (12), 925-931, 2021	232	2021
A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps H Rücker, B Heinemann, W Winkler, R Barth, J Borngraber, J Drews, ... IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010	224	2010
Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD Y Yamamoto, P Zaumseil, T Arguirov, M Kittler, B Tillack Solid-State Electronics 60 (1), 2-6, 2011	178	2011
Novel collector design for high-speed SiGe: C HBTs B Heinemann, H Rucker, R Barth, J Bauer, D Bolze, E Bugiel, J Drews, ... Digest. International Electron Devices Meeting,, 775-778, 2002	126	2002
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics express 22 (1), 399-410, 2014	124	2014
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 2013	117	2013
SiGe BiCMOS technology with 3.0 ps gate delay H Rucker, B Heinemann, R Barth, J Bauer, K Blum, D Bolze, J Drews, ... 2007 IEEE International Electron Devices Meeting, 651-654, 2007	100	2007
CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes E Talamas Simola, V Kiyek, A Ballabio, V Schlykow, J Frigerio, ... ACS photonics 8 (7), 2166-2173, 2021	79	2021
Graphene grown on Ge (0 0 1) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ... Carbon 75, 104-112, 2014	79	2014
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016	76	2016
Monolithically integrated 25Gbit/sec receiver for 1.55 μm in photonic BiCMOS technology D Knoll, S Lischke, L Zimmermann, B Heinemann, D Micusik, ... Optical Fiber Communication Conference, Th4C. 4, 2014	59	2014
A complementary BiCMOS technology with high speed npn and pnp SiGe: C HBTs B Heinemann, R Barth, D Bolze, J Drews, P Formanek, O Fursenko, ... IEEE International Electron Devices Meeting 2003, 5.2. 1-5.2. 4, 2003	57	2003
A low-parasitic collector construction for high-speed SiGe: C HBTs B Heinemann, R Barth, D Bolze, J Drews, P Formanek, T Grabolla, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004	55	2004
A flexible, low-cost, high performance SiGe: C BiCMOS process with a one-mask HBT module D Knoll, KE Ehwald, B Heinemann, A Fox, K Blum, H Rucker, ... Digest. International Electron Devices Meeting,, 783-786, 2002	54	2002
BiCMOS silicon photonics platform L Zimmermann, D Knoll, M Kroh, S Lischke, D Petousi, G Winzer, ... Optical Fiber Communication Conference, Th4E. 5, 2015	53	2015
Low threading dislocation Ge on Si by combining deposition and etching Y Yamamoto, G Kozlowski, P Zaumseil, B Tillack Thin Solid Films 520 (8), 3216-3221, 2012	49	2012
SiGe HBT module with 2.5 ps gate delay A Fox, B Heinemann, R Barth, D Bolze, J Drews, U Haak, D Knoll, B Kuck, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	49	2008
Atomic layer processing for doping of SiGe B Tillack, Y Yamamoto, D Bolze, B Heinemann, H Rücker, D Knoll, ... Thin Solid Films 508 (1-2), 279-283, 2006	43	2006
Molecular beam growth of micrometer-size graphene on mica G Lippert, J Dabrowski, Y Yamamoto, F Herziger, J Maultzsch, ... Carbon 52, 40-48, 2013	40	2013

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