| Synchronous non-volatile logic gate design based on resistive switching memories W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ... IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2014 | 124 | 2014 |
| True random number generator integration in a resistive RAM memory array using input current limitation H Aziza, J Postel-Pellerin, H Bazzi, P Canet, M Moreau, V Della Marca, ... IEEE Transactions on Nanotechnology 19, 214-222, 2020 | 48 | 2020 |
| An overview of non-volatile flip-flops based on emerging memory technologies JM Portal, M Bocquet, M Moreau, H Aziza, D Deleruyelle, Y Zhang, ... Journal of Electronic Science and Technology 12 (2), 173-181, 2014 | 40 | 2014 |
| RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications H Bazzi, A Harb, H Aziza, M Moreau, A Kassem Analog Integrated Circuits and Signal Processing 106, 351-361, 2021 | 38 | 2021 |
| SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures A Levisse, B Giraud, JP Noël, M Moreau, JM Portal Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th, 1-4, 2015 | 33 | 2015 |
| Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells WS Zhao, JM Portal, W Kang, M Moreau, Y Zhang, H Aziza, JO Klein, ... Journal of Parallel and Distributed Computing 74 (6), 2484-2496, 2014 | 29 | 2014 |
| Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO2)/28 nm FDSOI CMOS Technology JM Portal, M Bocquet, S Onkaraiah, M Moreau, H Aziza, D Deleruyelle, ... IEEE Transactions on Nanotechnology 16 (4), 677-686, 2017 | 28 | 2017 |
| Architecture, design and technology guidelines for crosspoint memories A Levisse, B Giraud, JP Noel, M Moreau, JM Portal 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2017 | 20 | 2017 |
| True random number generation exploiting SET voltage variability in resistive RAM memory arrays J Postel-Pellerin, H Bazzi, H Aziza, P Canet, M Moreau, V Della Marca, ... 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-5, 2019 | 18 | 2019 |
| Investigation of capacitance–voltage characteristics in Ge/high-κ MOS devices M Moreau, D Munteanu, JL Autran, F Bellenger, J Mitard, M Houssa Journal of Non-Crystalline Solids 355 (18-21), 1171-1175, 2009 | 18 | 2009 |
| Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations A Levisse, M Bocquet, M Rios, M Alayan, M Moreau, E Nowak, G Molas, ... IEEE Access 8, 109297-109308, 2020 | 17 | 2020 |
| ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology H Aziza, P Canet, J Postel-Pellerin, M Moreau, JM Portal, M Bocquet 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 16 | 2017 |
| An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs) H Aziza, M Moreau, M Fieback, M Taouil, S Hamdioui IEEE Access 8, 137263-137274, 2020 | 15 | 2020 |
| Multi-level control of resistive ram (Rram) using a write termination to achieve 4 bits/cell in high resistance state H Aziza, S Hamdioui, M Fieback, M Taouil, M Moreau, P Girard, A Virazel, ... Electronics 10 (18), 2222, 2021 | 14 | 2021 |
| Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal–oxide–semiconductor field-effect transistors M Moreau, D Munteanu, JL Autran Japanese Journal of Applied Physics 47 (9R), 7013, 2008 | 14 | 2008 |
| A capacitor-less CMOS neuron circuit for neuromemristive networks H Aziza, M Moreau, A Pérez, A Virazel, P Girard 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), 1-4, 2019 | 13 | 2019 |
| Switching event detection and self-termination programming circuit for energy efficient ReRAM memory arrays M Alayan, E Muhr, A Levisse, M Bocquet, M Moreau, E Nowak, G Molas, ... IEEE Transactions on Circuits and Systems II: Express Briefs 66 (5), 748-752, 2019 | 13 | 2019 |
| Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials M Moreau, D Munteanu, JL Autran Microelectronic engineering 88 (4), 366-369, 2011 | 12 | 2011 |
| RRAM Crossbar Arrays for Storage Class Memory Applications: Throughput and Density Considerations A Levisse, B Giraud, JP Noel, M Moreau, JM Portal 2018 Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2018 | 11 | 2018 |
| Multilevel operation in oxide based resistive RAM with SET voltage modulation H Aziza, H Ayari, S Onkaraiah, M Moreau, JM Portal, M Bocquet 2016 International Conference on Design and Technology of Integrated Systems …, 2016 | 11 | 2016 |
Portal Jean-MichelFull Professor Aix-Marseille Université - IM2NPAdresse e-mail validée de univ-amu.fr
