Ron Schrimpf

Citée par

	Toutes	Depuis 2019
Citations	29635	9665
indice h	87	45
indice i10	551	307

1900

950

475

1425

1994199519961997199819992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024150 192 219 188 219 179 266 183 283 381 527 386 528 728 1038 898 1077 1502 1245 1508 1396 1784 1419 1585 1586 1722 1456 1806 1579 1747 1348

Accès public

Tout afficher

85 articles

64 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Robert A ReedVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
SOKRATES T. PANTELIDESProfessor of Physics, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Kenneth GallowayVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Enxia ZhangUniversity of Central FloridaAdresse e-mail validée de ucf.edu
Michael AllesVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Robert A. WellerVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Lloyd MassengillVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Arthur WitulskiResearch Professor Electrical Engineering, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Brian SierawskiResearch Associate Professor, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Andrew SternbergVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Marcus Mendenhallnist or vanderbilt or caltechAdresse e-mail validée de nist.gov
Bharat BhuvaVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Kevin WarrenVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Dennis R. BallStaff Engineer, Vanderbilt universityAdresse e-mail validée de vanderbilt.edu
Dimitri LintenImecAdresse e-mail validée de imec.be
Jonathan PellishNASA Goddard Space Flight CenterAdresse e-mail validée de nasa.gov
Sergey RashkeevPrincipal Scientist, Acting Research Director, Qatar Environment & Energy Research InstituteAdresse e-mail validée de qf.org.qa
Dale P. McMorrowNaval Research LaboratoryAdresse e-mail validée de nrl.navy.mil
Steven KosierVanderbilt UniversityAdresse e-mail validée de Vanderbilt.edu

Suivre

Ron Schrimpf

Professor of Electrical Engineering, Vanderbilt University

Adresse e-mail validée de vanderbilt.edu

Semiconductor Devices Microelectronics Radiation Effects in Electronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Charge collection and charge sharing in a 130 nm CMOS technology OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ... IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006	489	2006
Response of advanced bipolar processes to ionizing radiation EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin IEEE transactions on nuclear science 38 (6), 1342-1351, 1991	414	1991
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994	376	1994
Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002	295	2002
Monte Carlo simulation of single event effects RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ... IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010	287	2010
Defect generation by hydrogen at the Si-SiO2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001	245	2001
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002	238	2002
Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE Transactions on Nuclear Science 40 (6), 1276-1285, 1993	238	1993
ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood 2008 European Conference on Radiation and Its Effects on Components and …, 2008	235	2008
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007	230	2007
Impact of low-energy proton induced upsets on test methods and rate predictions BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ... IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009	227	2009
Single event transient pulse widths in digital microcircuits MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ... IEEE transactions on nuclear science 51 (6), 3285-3290, 2004	222	2004
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002	212	2002
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005	202	2005
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996	200	1996
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ... IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003	199	2003
Trends in the total-dose response of modern bipolar transistors RN Nowlin, EW Enlow, RD Schrimpf, WE Combs IEEE Transactions on Nuclear Science 39 (6), 2026-2035, 1992	197	1992
Radiation effects and soft errors in integrated circuits and electronic devices RD Schrimpf, DM Fleetwood World Scientific, 2004	191	2004
The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 CJ Nicklaw, ZY Lu, DM Fleetwood, RD Schrimpf, ST Pantelides IEEE Transactions on Nuclear Science 49 (6), 2667-2673, 2002	185	2002
Reactions of hydrogen with Si-SiO2 interfaces ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf IEEE Transactions on Nuclear Science 47 (6), 2262-2268, 2000	184	2000

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs