Thomas Schroeder

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Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsAdresse e-mail validée de ihp-microelectronics.com
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsAdresse e-mail validée de uniroma3.it
Jaroslaw DabrowskiIHPAdresse e-mail validée de ihp-microelectronics.com
Gang NiuXi'an Jiaotong UniversityAdresse e-mail validée de mail.xjtu.edu.cn
Yuji YamamotoIHPAdresse e-mail validée de ihp-microelectronics.com
Marcus BaeumerProfessor of Physical Chemistry, University BremenAdresse e-mail validée de uni-bremen.de
Gunther Lippertlimited access caused by retirement, Frankfurt (Oder) GermanyAdresse e-mail validée de ihp-microelectronics.com
Malgorzata Kot (Sowinska)BTU Cottbus-SenftenbergAdresse e-mail validée de b-tu.de
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringAdresse e-mail validée de ucla.edu
Alessandro GiussaniSilanna SemiconductorAdresse e-mail validée de silanna.com
Mindaugas LukosiusIHPAdresse e-mail validée de ihp-microelectronics.com
Lambert AlffTU DarmstadtAdresse e-mail validée de tu-darmstadt.de
Hans-Joachim FreundProfessor, Fritz-Haber-InstitutAdresse e-mail validée de fhi-berlin.mpg.de
Tobias SchülliESRF Scientist in charge of Beamline ID01; Deputy Group Head of the X-ray Nanoprobe groupAdresse e-mail validée de esrf.fr
Michele VirgilioPhysics Department, Pisa UniversityAdresse e-mail validée de df.unipi.it
Subhajit GuhaInfineon TechnologiesAdresse e-mail validée de infineon.com
Javier B GiorgiUniversity of OttawaAdresse e-mail validée de uottawa.ca
Sankaramangalam Ulhas, SharathInstitute of Materials Science, TU DarmstadtAdresse e-mail validée de oxide.tu-darmstadt.de
Enrique MirandaUniversitat Autonoma de BarcelonaAdresse e-mail validée de uab.cat
Grzegorz Lupina

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Thomas Schroeder

Leibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu Berlin

Adresse e-mail validée de ikz-berlin.de - Page d'accueil

Innovations in and by crystalline materials: From materials to markets


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Vibrational spectra of alumina-and silica-supported vanadia revisited: An experimental and theoretical model catalyst study N Magg, B Immaraporn, JB Giorgi, T Schroeder, M Bäumer, J Döbler, ... Journal of Catalysis 226 (1), 88-100, 2004	314	2004
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ... IEEE transactions on electron devices 58 (9), 3124-3131, 2011	297	2011
Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection P Wang, O Liang, W Zhang, T Schroeder, YH Xie Advanced Materials 25 (35), 4918-4924, 2013	246	2013
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions EA Miranda, C Walczyk, C Wenger, T Schroeder IEEE Electron Device Letters 31 (6), 609-611, 2010	218	2010
Towards forming-free resistive switching in oxygen engineered HfO2− x SU Sharath, T Bertaud, J Kurian, E Hildebrandt, C Walczyk, P Calka, ... Applied physics letters 104 (6), 2014	198	2014
Label-free SERS selective detection of dopamine and serotonin using graphene-Au nanopyramid heterostructure P Wang, M Xia, O Liang, K Sun, AF Cipriano, T Schroeder, H Liu, YH Xie Analytical chemistry 87 (20), 10255-10261, 2015	194	2015
EPITAXIAL GROWTH OF SiO₂ ON Mo(112) T Schroeder, M Adelt, B Richter, M Naschitzki, M Bäumer, HJ Freund Surface Review and Letters 7 (01n02), 7-14, 2000	172	2000
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016	171	2016
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017	147	2017
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ... Journal of Applied Physics 105 (11), 2009	140	2009
Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping GA Chahine, MI Richard, RA Homs-Regojo, TN Tran-Caliste, D Carbone, ... Applied Crystallography 47 (2), 762-769, 2014	136	2014
Formation of a faceted MoO2 epilayer on Mo (1 1 2) studied by XPS, UPS and STM T Schroeder, J Zegenhagen, N Magg, B Immaraporn, HJ Freund Surface science 552 (1-3), 85-97, 2004	135	2004
Study of CO adsorption on crystalline-silica-supported palladium particles JB Giorgi, T Schroeder, M Bäumer, HJ Freund Surface science 498 (1-2), L71-L77, 2002	127	2002
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO_x based Memristive Devices SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ... Advanced Functional Materials 27 (32), 1700432, 2017	126	2017
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics express 22 (1), 399-410, 2014	124	2014
Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ... Applied Physics Letters 100 (23), 2012	123	2012
Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ... Applied Physics Letters 98 (16), 2011	122	2011
Model catalyst studies on vanadia particles deposited onto a thin-film alumina support. 1. Structural characterization N Magg, JB Giorgi, T Schroeder, M Bäumer, HJ Freund The journal of physical chemistry b 106 (34), 8756-8761, 2002	119	2002
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ... Journal of Crystal Growth 529, 125297, 2020	118	2020
Toward a Reliable Synaptic Simulation Using Al-Doped HfO₂ RRAM S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ... ACS applied materials & interfaces 12 (9), 10648-10656, 2020	117	2020

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