| A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications KH Kim, S Gaba, D Wheeler, JM Cruz-Albrecht, T Hussain, N Srinivasa, ... Nano letters 12 (1), 389-395, 2012 | 1082 | 2012 |
| High-density crossbar arrays based on a Si memristive system SH Jo, KH Kim, W Lu Nano letters 9 (2), 870-874, 2009 | 787 | 2009 |
| Synaptic behaviors and modeling of a metal oxide memristive device T Chang, SH Jo, KH Kim, P Sheridan, S Gaba, W Lu Applied physics A 102, 857-863, 2011 | 487 | 2011 |
| Programmable resistance switching in nanoscale two-terminal devices SH Jo, KH Kim, W Lu Nano letters 9 (1), 496-500, 2009 | 436 | 2009 |
| Nanoscale resistive memory with intrinsic diode characteristics and long endurance KH Kim, S Hyun Jo, S Gaba, W Lu Applied Physics Letters 96 (5), 2010 | 284 | 2010 |
| Effect of general anaesthesia on functional outcome in patients with anterior circulation ischaemic stroke having endovascular thrombectomy versus standard care: a meta … BCV Campbell, WH Van Zwam, M Goyal, BK Menon, DWJ Dippel, ... The Lancet Neurology 17 (1), 47-53, 2018 | 256 | 2018 |
| Crossbar RRAM arrays: Selector device requirements during read operation J Zhou, KH Kim, W Lu IEEE Transactions on Electron Devices 61 (5), 1369-1376, 2014 | 242 | 2014 |
| Silicon-based nanoscale resistive device with adjustable resistance W Lu, SH Jo, KH Kim US Patent 8,687,402, 2014 | 206 | 2014 |
| Sub-5nm all-around gate FinFET for ultimate scaling H Lee, LE Yu, SW Ryu, JW Han, K Jeon, DY Jang, KH Kim, J Lee, JH Kim, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 58-59, 2006 | 177 | 2006 |
| Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects SH Jo, KH Kim, J Bettinger US Patent 9,570,683, 2017 | 168 | 2017 |
| Two-terminal resistive switches (memristors) for memory and logic applications W Lu, KH Kim, T Chang, S Gaba 16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), 217-223, 2011 | 144 | 2011 |
| Silicon based nanoscale crossbar memory W Lu, SH Jo, KH Kim US Patent 8,071,972, 2011 | 142 | 2011 |
| Si memristive devices applied to memory and neuromorphic circuits SH Jo, KH Kim, T Chang, S Gaba, W Lu Proceedings of 2010 IEEE International Symposium on Circuits and Systems, 13-16, 2010 | 128 | 2010 |
| Device and SPICE modeling of RRAM devices P Sheridan, KH Kim, S Gaba, T Chang, L Chen, W Lu Nanoscale 3 (9), 3833-3840, 2011 | 124 | 2011 |
| Experimental, modeling and simulation studies of nanoscale resistance switching devices SH Jo, T Chang, KH Kim, S Gaba, W Lu 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), 493-495, 2009 | 68 | 2009 |
| Complementary metal oxide semiconductor image sensor and method for fabricating the same YK Choi, KH Kim US Patent 7,741,664, 2010 | 56 | 2010 |
| Phase change memory device using carbon nanotube and method for fabricating the same YK Choi, KH Kim US Patent 7,749,801, 2010 | 38 | 2010 |
| Controlling on-state current for two-terminal memory KH Kim, P Lu, CC Chen, SH Jo US Patent 9,093,635, 2015 | 30 | 2015 |
| Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells YK Choi, KH Kim US Patent 8,008,706, 2011 | 30 | 2011 |
| Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects SH Jo, KH Kim, J Bettinger US Patent 9,564,587, 2017 | 18 | 2017 |