Jiong Zhao(赵炯)

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LY Thuc Hue (李淑惠)Department of Chemistry, City University of Hong KongAdresse e-mail validée de cityu.edu.hk
young hee leeprofessor of physics, sungkyunkwan universityAdresse e-mail validée de skku.edu
Lok Wing WONGThe Hong Kong Polytechnic UniversityAdresse e-mail validée de connect.polyu.hk
Qingming DengIFW Dresden (Leibniz institute for solid state and materials research)Adresse e-mail validée de ifw-dresden.de
Fangyuan ZHENGThe Hong Kong Polytechnic UniversityAdresse e-mail validée de connect.polyu.hk
Quoc Huy ThiCity University of Hong KongAdresse e-mail validée de my.cityu.edu.hk
C.S. LeeCity University of Hong KongAdresse e-mail validée de cityu.edu.hk
Dong Hoon Keum (금동훈)삼성전기, Samsung Electro-Mechanics CO.LTD, Corporate R&D Institute, Republic of KoreaAdresse e-mail validée de samsung.com
Seok Joon YunUniversity of UlsanAdresse e-mail validée de ulsan.ac.kr
Shu Ping LauThe Hong Kong Polytechnic University and Nanyang Technological UniversityAdresse e-mail validée de polyu.edu.hk
Gang Hee HanIncheon National UniversityAdresse e-mail validée de inu.ac.kr
Prof. Feng YanChair Professor of Organic Electronics, Department of Applied Physics, The Hong Kong PolytechnicAdresse e-mail validée de polyu.edu.hk
IO Weng FuStudent, The Hong Kong Polytechnic UniersityAdresse e-mail validée de connect.polyu.hk
Hyun KimCINAP, Sungkyunkwan UniversityAdresse e-mail validée de skku.edu
Sheng Dai (戴升)East China University of Science and TechnologyAdresse e-mail validée de ecust.edu.cn
Jung Ho KimResearch Fellow, Department of Phyiscs, The University of Texas at AustinAdresse e-mail validée de austin.utexas.edu
Youngjo JinPostdoctoral Research Fellow, Department of Physics, Harvard UniversityAdresse e-mail validée de g.harvard.edu
Ning WangHong Kong University of Science and TechnologyAdresse e-mail validée de ust.hk
Sung Wng KimDepartment of Energy Science, Sungkyunkwan UniversityAdresse e-mail validée de skku.edu
Heejun YangProfessor, KAIST Physics, KoreaAdresse e-mail validée de kaist.ac.kr

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Jiong Zhao(赵炯)

HKPU

Adresse e-mail validée de polyu.edu.hk - Page d'accueil

materials science nanoscience electron microscopy


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Phase patterning for ohmic homojunction contact in MoTe2 S Cho, S Kim, JH Kim, J Zhao, J Seok, DH Keum, J Baik, DH Choe, ... Science 349 (6248), 625-628, 2015	1161	2015
Free-standing single-atom-thick iron membranes suspended in graphene pores J Zhao, Q Deng, A Bachmatiuk, G Sandeep, A Popov, J Eckert, ... Science 343 (6176), 1228-1232, 2014	344	2014
A growth mechanism for free-standing vertical graphene J Zhao, M Shaygan, J Eckert, M Meyyappan, MH Rümmeli Nano Letters 14 (6), 3064-3071, 2014	256	2014
Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries TH Ly, DJ Perello, J Zhao, Q Deng, H Kim, GH Han, SH Chae, HY Jeong, ... Nature communications 7 (1), 10426, 2016	224	2016
Solution‐phase epitaxial growth of perovskite films on 2D material flakes for high‐performance solar cells G Tang, P You, Q Tai, A Yang, J Cao, F Zheng, Z Zhou, J Zhao, PKL Chan, ... Advanced Materials 31 (24), 1807689, 2019	215	2019
Charge Transport in MoS₂/WSe₂ van der Waals Heterostructure with Tunable Inversion Layer MH Doan, Y Jin, S Adhikari, S Lee, J Zhao, SC Lim, YH Lee ACS nano 11 (4), 3832-3840, 2017	202	2017
Heterogeneous Defect Domains in Single‐Crystalline Hexagonal WS₂ HY Jeong, Y Jin, SJ Yun, J Zhao, J Baik, DH Keum, HS Lee, YH Lee Advanced Materials 29 (15), 1605043, 2017	183	2017
Synthesis and characterization of carbon nanowalls on different substrates by radio frequency plasma enhanced chemical vapor deposition K Davami, M Shaygan, N Kheirabi, J Zhao, DA Kovalenko, MH Rümmeli, ... Carbon 72, 372-380, 2014	145	2014
Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides TH Ly, MH Chiu, MY Li, J Zhao, DJ Perello, MO Cichocka, HM Oh, ... ACS nano 8 (11), 11401-11408, 2014	144	2014
2D transition metal–TCNQ sheets as bifunctional single-atom catalysts for oxygen reduction and evolution reaction (ORR/OER) Q Deng, J Zhao, T Wu, G Chen, HA Hansen, T Vegge Journal of Catalysis 370, 378-384, 2019	142	2019
In Situ Observations of Free-Standing Graphene-like Mono- and Bilayer ZnO Membranes HT Quang, A Bachmatiuk, A Dianat, F Ortmann, J Zhao, JH Warner, ... ACS nano 9 (11), 11408-11413, 2015	139	2015
Tunable active edge sites in PtSe2 films towards hydrogen evolution reaction S Lin, Y Liu, Z Hu, W Lu, CH Mak, L Zeng, J Zhao, Y Li, F Yan, YH Tsang, ... Nano Energy 42, 26-33, 2017	133	2017
Electrical breakdown of nanowires J Zhao, H Sun, S Dai, Y Wang, J Zhu Nano letters 11 (11), 4647-4651, 2011	129	2011
Synergies of Fe single atoms and clusters on N‐doped carbon electrocatalyst for pH‐universal oxygen reduction M Liu, J Lee, TC Yang, F Zheng, J Zhao, CM Yang, LYS Lee Small Methods 5 (5), 2001165, 2021	124	2021
Direct in situ observations of single Fe atom catalytic processes and anomalous diffusion at graphene edges J Zhao, Q Deng, SM Avdoshenko, L Fu, J Eckert, MH Rümmeli Proceedings of the National Academy of Sciences 111 (44), 15641-15646, 2014	114	2014
Freestanding ultrathin metallic nanosheets: Materials, synthesis, and applications T Ling, JJ Wang, H Zhang, ST Song, YZ Zhou, J Zhao, XW Du Advanced Materials 27 (36), 5396-5402, 2015	107	2015
Conductivity enhancement by slight indium doping in ZnO nanowires for optoelectronic applications M Ahmad, J Zhao, J Iqbal, W Miao, L Xie, R Mo, J Zhu Journal of Physics D: Applied Physics 42 (16), 165406, 2009	106	2009
Telluriding monolayer MoS₂ and WS₂ via alkali metal scooter SJ Yun, GH Han, H Kim, DL Duong, BG Shin, J Zhao, QA Vu, J Lee, ... Nature communications 8 (1), 2163, 2017	103	2017
Electrical Transport Properties of Polymorphic MoS₂ JS Kim, J Kim, J Zhao, S Kim, JH Lee, Y Jin, H Choi, BH Moon, JJ Bae, ... ACS nano 10 (8), 7500-7506, 2016	103	2016
Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene. VL Nguyen, DJ Perello, S Lee, CT Nai, BG Shin, JG Kim, HY Park, ... Advanced Materials (Deerfield Beach, Fla.) 28 (37), 8177-8183, 2016	103	2016

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