Himadri Pandey, Ph.D.

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Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHAdresse e-mail validée de eld.rwth-aachen.de
SATENDER KATARIARWTH Aachen UniversityAdresse e-mail validée de rwth-aachen.de
Amit GahoiPh.D student, RWTH Aachen UniversityAdresse e-mail validée de eld.rwth-aachen.de
stefan wagnerBlack Semiconductor GmbHAdresse e-mail validée de blacksemicon.de
Michael NagelDr.-Ing., Protemics GmbH, Aachen, GermanyAdresse e-mail validée de protemics.com
Sam VaziriStanford UniversityAdresse e-mail validée de stanford.edu
Eduard AlarconFull professor Electrical Engineering, UPC BarcelonaTechAdresse e-mail validée de upc.edu
Mario E. Iannazzo SoterasPhD in Electronics EngineeringAdresse e-mail validée de upc.edu
Anderson David SmithAssociate Professor, Chalmers University of TechnologyAdresse e-mail validée de kth.se
Mikael ÖstlingKTH Royal Institute of TechnologyAdresse e-mail validée de kth.se
Daniel NeumaierUniversity of WuppertalAdresse e-mail validée de uni-wuppertal.de
Mehrdad Shaygan, PhDSenior R&D Project Manager, Corporate R&D of ams OSRAMAdresse e-mail validée de ams-osram.com
Zhenxing WangAMO GmbHAdresse e-mail validée de amo.de
Gianluca FioriUniversity of Pisa, ItalyAdresse e-mail validée de mercurio.iet.unipi.it
Giuseppe IannacconeUniversity of Pisa, ItalyAdresse e-mail validée de unipi.it
Saul RodriguezAssociate Professor, KTH Royal Institute of Technology, SwedenAdresse e-mail validée de kth.se
Thomas ZimmerUniversity of BordeauxAdresse e-mail validée de ims-bordeaux.fr
sebastien fregoneseCR CNRS, Université de BordeauxAdresse e-mail validée de ims-bordeaux.fr
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEAdresse e-mail validée de iue.tuwien.ac.at
Michael WaltlFull Professor at TU Wien, Vienna, AustriaAdresse e-mail validée de iue.tuwien.ac.at

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Himadri Pandey, Ph.D.

Sr. NPI Engineer - RF/MX at Advantest

Adresse e-mail validée de advantest.com

Graphene Field Effect Transistors Radio frequency FEM Simulations Antenna Simulations


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Chemical vapor deposited graphene: From synthesis to applications S Kataria, S Wagner, J Ruhkopf, A Gahoi, H Pandey, R Bornemann, ... physica status solidi (a) 211 (11), 2439-2449, 2014	125	2014
Growth‐Induced Strain in Chemical Vapor Deposited Monolayer MoS₂: Experimental and Theoretical Investigation S Kataria, S Wagner, T Cusati, A Fortunelli, G Iannaccone, H Pandey, ... Advanced Materials Interfaces 4 (17), 1700031, 2017	69	2017
All CVD boron nitride encapsulated graphene FETs with CMOS compatible metal edge contacts H Pandey, M Shaygan, S Sawallich, S Kataria, Z Wang, A Noculak, M Otto, ... IEEE Transactions on Electron Devices 65 (10), 4129-4134, 2018	37	2018
Dependable contact related parameter extraction in graphene–metal junctions A Gahoi, S Kataria, F Driussi, S Venica, H Pandey, D Esseni, L Selmi, ... Advanced Electronic Materials 6 (10), 2000386, 2020	25	2020
Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration M Iannazzo, V Lo Muzzo, S Rodriguez, H Pandey, A Rusu, M Lemme, ... Electron Devices, IEEE Transactions on 62 (11), 3870-3875, 2015	17	2015
Assessment of wafer‐level transfer techniques of graphene with respect to semiconductor industry requirements S Wittmann, S Pindl, S Sawallich, M Nagel, A Michalski, H Pandey, ... Advanced Materials Technologies 8 (8), 2201587, 2023	8	2023
High voltage gain inverters from artificially stacked bilayer CVD graphene FETs H Pandey, S Kataria, A Gahoi, MC Lemme IEEE Electron Device Letters 38 (12), 1747-1750, 2017	6	2017
Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors H Pandey, JD Aguirre‐Morales, S Kataria, S Fregonese, V Passi, ... Annalen der Physik 2017, 1700106, 2017	6	2017
Improved voltage gain in mechanically stacked bilayer graphene field effect transistors H Pandey, S Kataria, V Passi, M Iannazzo, E Alarcon, M. C. Lemme 2016 Joint International EUROSOI Workshop and International Conference on …, 2016	4	2016
CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancement M Iannazzo, E Alarcon, H Pandey, V Passi, MC Lemme 2016 46th European Solid-State Device Research Conference (ESSDERC), 244-247, 2016	2	2016
Fabrication, Characterization and Simulation of Graphene Field Effect Transistors operating at Microwave Frequencies H Pandey Kungliga Tekniska Högskolan, Stockholm, Sweden, 2013	2*	2013
Optical Nano/Micro AC Generators: A Novel Approach H Pandey Proceedings of the 13th National Conference on Mechanisms and Machines …, 2007	2	2007
Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries MA Giambra, C Benz, F Wu, M Thürmer, G Balachandran, A Benfante, ... IEEE Journal of the Electron Devices Society 7, 964-968, 2019	1	2019
All CVD Boron Nitride Encapsulated Graphene FETs H Pandey, M Shaygan, S Sawallich, S Kataria, M Otto, Z Wang, M Nagel, ... 2018 76th Device Research Conference (DRC), 1-2, 2018	1	2018
A systematic study of charge trapping in single-layer double-gated GFETs YY Illarionov, G Rzepa, M Waltl, H Pandey, S Kataria, V Passi, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016	1	2016
Feasibility Study of Novel Optical MEMS for Nano Computing Applications KM Prachi, H Pandey Advanced Computing and Communications, 2008. ADCOM 2008. 16th International …, 2008	1	2008
Wafer-scale inspection of graphene conductivity by THz near-field scanning: As-grown on sapphire and after transfer to SiO2/Si A Michalski, S Sawallich, S Krotkus, H Pandey, K Satender, M Heuken, ... 2020 45th International Conference on Infrared, Millimeter, and Terahertz …, 2020		2020
Graphene Processing on Wafer Scale for Microelectronic Applications H Pandey Graphene Industrial Forum 2020, 2020		2020
Engineering graphene field effect transistors for analog applications H Pandey Rheinisch-Westfälische Technische Hochschule Aachen, 2019/2020, 2019		2019
Gate tunable electrical transport in mechanically stacked CVD bilayer graphene field effect transistors at high bias H Pandey, S Kataria, V Passi, MC Lemme Graphene 2017, 2017		2017

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