Gengchiau Liang

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Xiao GongNational University of SingaporeAdresse e-mail validée de nus.edu.sg
Mansoor B. A. JalilNational University of SingaporeAdresse e-mail validée de nus.edu.sg
Zhifeng ZhuSchool of Information Science and Technology, ShanghaiTech UniversityAdresse e-mail validée de shanghaitech.edu.cn
avik W ghoshProfessor, University of Virginia, Electrical EngineeringAdresse e-mail validée de virginia.edu
Seng Ghee TanTheoretical Physicist (Applied)Adresse e-mail validée de dsi.a-star.edu.sg
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Hyunsoo YangElectrical and Computer Engineering, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Yuan DONGInstitute of Microelectronics (IME, A*Star), and National University of Singapore (NUS)Adresse e-mail validée de u.nus.edu
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingAdresse e-mail validée de intel.com
Neophytos NeophytouSchool of Engineering, University of WarwickAdresse e-mail validée de warwick.ac.uk
Gaurav GuptaSpin DevicesAdresse e-mail validée de spindevices.com
Supriyo DattaProfessor, Purdue UniversityAdresse e-mail validée de purdue.edu
Yuan Ping FengDepartment of Physics, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Ganesh SamudraAssociate Professor, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Can YesilyurtNanoelectronics Research CenterAdresse e-mail validée de nanoelectronicsresearch.center
MINGGANG ZENGInstitute for Infocomm Research (I2R), Agency for Science, Technology and Research (A*STARAdresse e-mail validée de i2r.a-star.edu.sg
Jian-Sheng WangDepartment of Physics, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Jie XiangWolf Greenfield & Sacks, P.C.Adresse e-mail validée de wolfgreenfield.com
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Xin Luo （罗鑫）Sun Yat-Sen UniversityAdresse e-mail validée de sysu.edu.cn

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Gengchiau Liang

National Yang Ming Chiao Tung University

Adresse e-mail validée de nycu.edu.tw - Page d'accueil

Nanoelectronics Computational Nanoelectronics Nanodevice modeling


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	321	2007
Thermoelectric performance of mx2 (m= mo, w; x= s, se) monolayers W Huang, H Da, G Liang Journal of Applied Physics 113 (10), 2013	294	2013
Silicon-based molecular electronics T Rakshit, GC Liang, AW Ghosh, S Datta Nano Letters 4 (10), 1803-1807, 2004	258	2004
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe₂/ferromagnet heterostructures S Shi, S Liang, Z Zhu, K Cai, SD Pollard, Y Wang, J Wang, Q Wang, P He, ... Nature nanotechnology 14 (10), 945-949, 2019	249	2019
Theoretical study of thermoelectric properties of few-layer MoS 2 and WSe 2 W Huang, X Luo, CK Gan, SY Quek, G Liang Physical Chemistry Chemical Physics 16 (22), 10866-10874, 2014	231	2014
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed Y Hu, J Xiang, G Liang, H Yan, CM Lieber Nano letters 8 (3), 925-930, 2008	210	2008
Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets K Cai, Z Zhu, JM Lee, R Mishra, L Ren, SD Pollard, P He, G Liang, KL Teo, ... Nature Electronics 3 (1), 37-42, 2020	209	2020
Performance analysis of a Ge/Si core/shell nanowire field-effect transistor G Liang, J Xiang, N Kharche, G Klimeck, CM Lieber, M Lundstrom Nano letters 7 (3), 642-646, 2007	208	2007
Graphene-based spin caloritronics M Zeng, Y Feng, G Liang Nano letters 11 (3), 1369-1373, 2011	204	2011
Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons X Ni, G Liang, JS Wang, B Li Applied Physics Letters 95 (19), 2009	176	2009
High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection S Lukman, L Ding, L Xu, Y Tao, AC Riis-Jensen, G Zhang, QYS Wu, ... Nature nanotechnology 15 (8), 675-682, 2020	172	2020
Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe₄ D Kumar, CH Hsu, R Sharma, TR Chang, P Yu, J Wang, G Eda, G Liang, ... Nature Nanotechnology 16 (4), 421-425, 2021	162	2021
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 2007	156	2007
Electrostatic potential profiles of molecular conductors GC Liang, AW Ghosh, M Paulsson, S Datta Physical Review B 69 (11), 115302, 2004	151	2004
Single atomically sharp lateral monolayer p‐n heterojunction solar cells with extraordinarily high power conversion efficiency ML Tsai, MY Li, JRD Retamal, KT Lam, YC Lin, K Suenaga, LJ Chen, ... Advanced Materials 29 (32), 1701168, 2017	138	2017
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	99	2008
An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges KT Lam, G Liang Applied Physics Letters 92 (22), 2008	92	2008
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015	89	2015
Exploring low power and ultrafast memristor on p-type van der Waals SnS XF Lu, Y Zhang, N Wang, S Luo, K Peng, L Wang, H Chen, W Gao, ... Nano letters 21 (20), 8800-8807, 2021	85	2021
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010	82	2010

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