Articles avec mandats d'accès public - Jing GuoEn savoir plus
Non disponibles : 8
Two-dimensional intrinsic half-metals with large spin gaps
M Ashton, D Gluhovic, SB Sinnott, J Guo, DA Stewart, RG Hennig
Nano letters 17 (9), 5251-5257, 2017
Exigences : US National Science Foundation
Emulating bilingual synaptic response using a junction-based artificial synaptic device
H Tian, X Cao, Y Xie, X Yan, A Kostelec, D DiMarzio, C Chang, LD Zhao, ...
ACS nano 11 (7), 7156-7163, 2017
Exigences : US National Science Foundation, US Department of Defense
Electrothermal investigation on vertically aligned single-walled carbon nanotube contacted phase-change memory array for 3-D ICs
W Chen, WY Yin, E Li, M Cheng, J Guo
IEEE Transactions on Electron Devices 62 (10), 3258-3263, 2015
Exigences : National Natural Science Foundation of China
Scaling Analysis of High Gain Monolayer MoS2Photodetector for Its Performance Optimization
W Chen, WY Yin, WS Zhao, R Hao, E Li, K Kang, J Guo
IEEE Transactions on Electron Devices 63 (4), 1608-1614, 2016
Exigences : National Natural Science Foundation of China
On Low-Resistance Contacts to 2-D MoTe2 by Crystalline Phase Junctions
Z Dong, J Guo
IEEE Transactions on Electron Devices 65 (4), 1583-1588, 2018
Exigences : US National Science Foundation
Thermal Transport in Single-Layer MoS2and Black Phosphorus Transistors
L Liu, J Guo
IEEE Transactions on Electron Devices 63 (3), 1189-1194, 2016
Exigences : US National Science Foundation
Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective
Z Dong, W Chen, WY Yin, J Guo
Nanoscale Devices, 3-23, 2018
Exigences : US National Science Foundation, National Natural Science Foundation of China
Electrothermal simulation of single-walled carbon nanotube (SWCNT)-based phase change memory for 3-DICs
W Chen, WY Yin, M Cheng, J Guo
2015 IEEE MTT-S International Conference on Numerical Electromagnetic and …, 2015
Exigences : National Natural Science Foundation of China
Disponibles quelque part : 27
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ...
ACS nano 9 (2), 2071-2079, 2015
Exigences : US Department of Energy
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
J Wu, HY Chen, N Yang, J Cao, X Yan, F Liu, Q Sun, X Ling, J Guo, ...
Nature Electronics 3 (8), 466-472, 2020
Exigences : US National Science Foundation, US Department of Defense
Atomically thin femtojoule memristive device
H Zhao, Z Dong, H Tian, D DiMarzi, MG Han, L Zhang, X Yan, F Liu, ...
Advanced Materials 29 (47), 1703232, 2017
Exigences : US National Science Foundation, US Department of Energy, US Department of …
Optimal achieved blood pressure in acute intracerebral hemorrhage: INTERACT2
H Arima, E Heeley, C Delcourt, Y Hirakawa, X Wang, M Woodward, ...
Neurology 84 (5), 464-471, 2015
Exigences : Australian Research Council, National Health and Medical Research Council …
Computational methods for 2D materials: discovery, property characterization, and application design
JT Paul, AK Singh, Z Dong, H Zhuang, BC Revard, B Rijal, M Ashton, ...
Journal of Physics: Condensed Matter 29 (47), 473001, 2017
Exigences : US National Science Foundation, US Department of Energy
Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes
C Chen, Y Lin, W Zhou, M Gong, Z He, F Shi, X Li, JZ Wu, KT Lam, ...
Nature Electronics 4 (9), 653-663, 2021
Exigences : US National Science Foundation, US Department of Energy, National Natural …
A simple model of negative capacitance FET with electrostatic short channel effects
Z Dong, J Guo
IEEE Transactions on Electron Devices 64 (7), 2927-2934, 2017
Exigences : US National Science Foundation
Data retention and low voltage operation of Al2O3/Hf0. 5Zr0. 5O2 based ferroelectric tunnel junctions
A Shekhawat, G Walters, N Yang, J Guo, T Nishida, S Moghaddam
Nanotechnology 31 (39), 39LT01, 2020
Exigences : US National Science Foundation
Tunneling current in HfO2 and Hf0. 5Zr0. 5O2-based ferroelectric tunnel junction
Z Dong, X Cao, T Wu, J Guo
Journal of Applied Physics 123 (9), 2018
Exigences : US National Science Foundation
Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering
X Liu, A Islam, J Guo, PXL Feng
ACS nano 14 (2), 1457-1467, 2020
Exigences : US National Science Foundation
Assessment of 2-D transition metal dichalcogenide FETs at sub-5-nm gate length scale
Z Dong, J Guo
IEEE Transactions on Electron Devices 64 (2), 622-628, 2017
Exigences : US National Science Foundation
Atomically thin CBRAM enabled by 2-D materials: scaling behaviors and performance limits
Z Dong, H Zhao, D DiMarzio, MG Han, L Zhang, J Tice, H Wang, J Guo
IEEE Transactions on Electron Devices 65 (10), 4160-4166, 2018
Exigences : US National Science Foundation, US Department of Energy, US Department of …
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