Jing Guo

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Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Hongjie DaiProfessor of chemistry, stanford universityAdresse e-mail validée de stanford.edu
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC BerkeleyAdresse e-mail validée de berkeley.edu
Yijian OuyangMaxim IntegratedAdresse e-mail validée de ufl.edu
Youngki YoonAssociate Professor, Dept. of Electrical and Computer Engineering, University of WaterlooAdresse e-mail validée de uwaterloo.ca
Supriyo DattaProfessor, Purdue UniversityAdresse e-mail validée de purdue.edu
Qun GaoDepartment of Electrical and Computer Engineering, University of FloridaAdresse e-mail validée de ufl.edu
Xinran WangProfessor, Nanjing UniversityAdresse e-mail validée de nju.edu.cn
Hui FangAssociate Professor, Dartmouth CollegeAdresse e-mail validée de dartmouth.edu
Hailiang WangYale UniversityAdresse e-mail validée de yale.edu
Yang LuCadence Design SystemAdresse e-mail validée de cadence.com
Rehan KapadiaAssociate Professor, University of Southern CaliforniaAdresse e-mail validée de usc.edu
Damon B. FarmerIBM T.J. Watson Research CenterAdresse e-mail validée de us.ibm.com
Ant UralAssociate Professor, Electrical and Computer Engineering, University of FloridaAdresse e-mail validée de ece.ufl.edu
Paul McEuenProfessor of Physics, Cornell UniversityAdresse e-mail validée de cornell.edu
Andrew G. RinzlerProfessor of Physics, University of FloridaAdresse e-mail validée de phys.ufl.edu
Kartik MohanramAssociate Professor of Electrical and Computer Engineering, University of PittsburghAdresse e-mail validée de pitt.edu
Alexandra C. FordSandia National LaboratoriesAdresse e-mail validée de sandia.gov
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Hong SeokminKISTAdresse e-mail validée de kist.re.kr

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Jing Guo

Professor, University of Florida

Adresse e-mail validée de ufl.edu


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Ballistic carbon nanotube field-effect transistors A Javey, J Guo, Q Wang, M Lundstrom, H Dai nature 424 (6949), 654-657, 2003	4111	2003
One-Dimensional Electrical Contact to a Two-Dimensional Material CRD L Wang, I Meric, PY Huang, Q Gao, Y Gao, H Tran, T Taniguchi, K Watanabe ... Science 342 (6158), 614-617, 2013	3337	2013
N-doping of graphene through electrothermal reactions with ammonia X Wang, X Li, L Zhang, Y Yoon, PK Weber, H Wang, J Guo, H Dai science 324 (5928), 768-771, 2009	2438	2009
Atomically thin p–n junctions with van der Waals heterointerfaces CH Lee, GH Lee, AM Van Der Zande, W Chen, Y Li, M Han, X Cui, ... Nature nanotechnology 9 (9), 676-681, 2014	2317	2014
Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon<? format?> Field-Effect Transistors X Wang, Y Ouyang, X Li, H Wang, J Guo, H Dai Physical review letters 100 (20), 206803, 2008	1924	2008
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002	1428	2002
Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003	988	2003
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium H Fang, M Tosun, G Seol, TC Chang, K Takei, J Guo, A Javey Nano letters 13 (5), 1991-1995, 2013	844	2013
High-field quasiballistic transport in short carbon nanotubes A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai Physical Review Letters 92 (10), 106804, 2004	804	2004
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ... Nano Letters 4 (3), 447-450, 2004	784	2004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ... Nano letters 4 (7), 1319-1322, 2004	757	2004
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe₂ SB Desai, G Seol, JS Kang, H Fang, C Battaglia, R Kapadia, JW Ager, ... Nano letters 14 (8), 4592-4597, 2014	745	2014
Dual-Gated MoS₂/WSe₂ van der Waals Tunnel Diodes and Transistors T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ... ACS nano 9 (2), 2071-2079, 2015	707	2015
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts A Javey, R Tu, DB Farmer, J Guo, RG Gordon, H Dai Nano letters 5 (2), 345-348, 2005	637	2005
Performance limits of monolayer transition metal dichalcogenide transistors L Liu, SB Kumar, Y Ouyang, J Guo IEEE Transactions on Electron Devices 58 (9), 3042-3047, 2011	609	2011
Nanoscale transistors: device physics, modeling and simulation M Lundstrom, J Guo Springer Science & Business Media, 2006	594	2006
Diameter-dependent electron mobility of InAs nanowires AC Ford, JC Ho, YL Chueh, YC Tseng, Z Fan, J Guo, J Bokor, A Javey Nano Letters 9 (1), 360-365, 2009	483	2009
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors J Guo, S Datta, M Lundstrom IEEE transactions on electron devices 51 (2), 172-177, 2004	402	2004
Performance projections for ballistic carbon nanotube field-effect transistors J Guo, M Lundstrom, S Datta Applied physics letters 80 (17), 3192-3194, 2002	395	2002
Toward multiscale modeling of carbon nanotube transistors J Guo, S Datta, M Lundstrom, MP Anantam International Journal for Multiscale Computational Engineering 2 (2), 2004	305	2004

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