| Temperature-dependent photoluminescence in light-emitting diodes T Lu, Z Ma, C Du, Y Fang, H Wu, Y Jiang, L Wang, L Dai, H Jia, W Liu, ... Scientific reports 4 (1), 6131, 2014 | 167 | 2014 |
| Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range Y Jiang, Y Li, Y Li, Z Deng, T Lu, Z Ma, P Zuo, L Dai, L Wang, H Jia, ... Scientific reports 5 (1), 1-7, 2015 | 149 | 2015 |
| Investigation of temperature-dependent photoluminescence in multi-quantum wells Y Fang, L Wang, Q Sun, T Lu, Z Deng, Z Ma, Y Jiang, H Jia, W Wang, ... Scientific reports 5 (1), 1-7, 2015 | 98 | 2015 |
| Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer T Lu, S Li, C Liu, K Zhang, Y Xu, J Tong, L Wu, H Wang, X Yang, Y Yin, ... Applied Physics Letters 100 (14), 2012 | 91 | 2012 |
| Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption C Du, Z Ma, J Zhou, T Lu, Y Jiang, P Zuo, H Jia, H Chen Applied Physics Letters 105 (7), 2014 | 60 | 2014 |
| InGaN platelets: synthesis and applications toward green and red light-emitting diodes Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ... Nano Letters 19 (5), 2832-2839, 2019 | 53 | 2019 |
| The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (9), 098503, 2011 | 51 | 2011 |
| Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers LJ Wu, ST Li, C Liu, HL Wang, TP Lu, K Zhang, GW Xiao, YG Zhou, ... Chinese Physics B 21 (6), 068506, 2012 | 35 | 2012 |
| The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality L Shang, T Lu, G Zhai, Z Jia, H Zhang, S Ma, T Li, J Liang, X Liu, B Xu RSC Advances 5 (63), 51201-51207, 2015 | 34 | 2015 |
| Blue InGaN light-emitting diodes with dip-shaped quantum wells TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (10), 108504, 2011 | 32* | 2011 |
| Enhanced performance of blue light-emitting diodes with InGaN/GaN superlattice as hole gathering layer C Liu, T Lu, L Wu, H Wang, Y Yin, G Xiao, Y Zhou, S Li IEEE Photonics Technology Letters 24 (14), 1239-1241, 2012 | 31 | 2012 |
| Realization of ultrahigh quality InGaN platelets to be used as relaxed templates for red micro-LEDs Z Bi, T Lu, J Colvin, E Sjogren, N Vainorius, A Gustafsson, J Johansson, ... ACS applied materials & interfaces 12 (15), 17845-17851, 2020 | 30 | 2020 |
| Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells Y Zhu, T Lu, X Zhou, G Zhao, H Dong, Z Jia, X Liu, B Xu Nanoscale research letters 12, 1-7, 2017 | 29 | 2017 |
| Facile preparation of stable solid-state carbon quantum dots with multi-peak emission Y Zheng, J Zheng, J Wang, Y Yang, T Lu, X Liu Nanomaterials 10 (2), 303, 2020 | 28 | 2020 |
| Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells H Dong, J Sun, S Ma, J Liang, T Lu, X Liu, B Xu Nanoscale 8 (11), 6043-6056, 2016 | 26 | 2016 |
| Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers JH Tong, ST Li, TP Lu, C Liu, HL Wang, LJ Wu, BJ Zhao, XF Wang, ... Chinese Physics B 21 (11), 118502, 2012 | 24 | 2012 |
| Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier X Zhou, T Lu, Y Zhu, G Zhao, H Dong, Z Jia, Y Yang, Y Chen, B Xu Nanoscale Research Letters 12, 1-8, 2017 | 17 | 2017 |
| Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas Y Zhu, T Lu, X Zhou, G Zhao, H Dong, Z Jia, X Liu, B Xu Applied Physics Express 10 (6), 061004, 2017 | 17 | 2017 |
| Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode H Dong, J Sun, S Ma, J Liang, T Lu, Z Jia, X Liu, B Xu Physical Chemistry Chemical Physics 18 (9), 6901-6912, 2016 | 16 | 2016 |
| Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications A Guo, L Zhang, N Cao, T Lu, Y Zhu, D Tian, Z Zhou, S He, B Xia, F Zhao Applied Physics Express 16 (2), 021004, 2023 | 15 | 2023 |