Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
163 2003 Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
147 2004 Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
143 2003 Epitaxial growth of Ge thick layers on nominal and 6 off Si (0 0 1); Ge surface passivation by Si JM Hartmann, A Abbadie, N Cherkashin, H Grampeix, L Clavelier
Semiconductor Science and Technology 24 (5), 055002, 2009
119 2009 Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ...
Ultramicroscopy 108 (4), 346-357, 2008
105 2008 Clusters formation in ultralow-energy high-dose boron-implanted silicon F Cristiano, X Hebras, N Cherkashin, A Claverie, W Lerch, S Paul
Applied physics letters 83 (26), 5407-5409, 2003
80 2003 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
70 2004 Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001) S Personnic, KK Bourdelle, F Letertre, A Tauzin, N Cherkashin, A Claverie, ...
Journal of Applied Physics 103 (2), 2008
69 2008 Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
67 2006 Amorphization, recrystallization and end of range defects in germanium A Claverie, S Koffel, N Cherkashin, G Benassayag, P Scheiblin
Thin Solid Films 518 (9), 2307-2313, 2010
66 2010 Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology T Müller, KH Heinig, W Möller, C Bonafos, H Coffin, N Cherkashin, ...
Applied physics letters 85 (12), 2373-2375, 2004
64 2004 End of range defects in Ge S Koffel, N Cherkashin, F Houdellier, MJ Hytch, G Benassayag, ...
Journal of Applied Physics 105 (12), 2009
58 2009 Modeling and experiments on diffusion and activation of phosphorus in germanium P Tsouroutas, D Tsoukalas, I Zergioti, N Cherkashin, A Claverie
Journal of Applied Physics 105 (9), 2009
58 2009 Ion beam induced defects in crystalline silicon F Cristiano, N Cherkashin, X Hebras, P Calvo, Y Lamrani, E Scheid, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
58 2004 High germanium content SiGe virtual substrates grown at high temperatures Y Bogumilowicz, JM Hartmann, F Laugier, G Rolland, T Billon, ...
Journal of crystal growth 283 (3-4), 346-355, 2005
57 2005 Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS O Weber, Y Bogumilowicz, T Ernst, JM Hartmann, F Ducroquet, F Andrieu, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
56 2005 Extended defects formation in nanosecond laser-annealed ion implanted silicon Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ...
Nano letters 14 (4), 1769-1775, 2014
52 2014 X-ray determination of threading dislocation densities in GaN/Al2O3 (0001) films grown by metalorganic vapor phase epitaxy VS Kopp, VM Kaganer, MV Baidakova, WV Lundin, AE Nikolaev, ...
journal of Applied Physics 115 (7), 2014
50 2014 Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon N Daghbouj, N Cherkashin, FX Darras, V Paillard, M Fnaiech, A Claverie
Journal of Applied Physics 119 (13), 2016
47 2016 Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ...
Solid-State Electronics 49 (11), 1734-1744, 2005
47 2005 