InN: A material with photovoltaic promise and challenges E Trybus, G Namkoong, W Henderson, S Burnham, WA Doolittle, ...
Journal of Crystal Growth 288 (2), 218-224, 2006
108 2006 Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics G Namkoong, WA Doolittle, AS Brown, M Losurdo, P Capezzuto, G Bruno
Journal of applied physics 91 (4), 2499-2507, 2002
104 2002 Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look
Applied Physics Letters 93 (17), 2008
98 2008 GaN betavoltaic energy converters C Honsberg, WA Doolittle, M Allen, C Wang
Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005
83 2005 Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy SD Burnham, G Namkoong, DC Look, B Clafin, WA Doolittle
Journal of Applied Physics 104 (2), 2008
75 2008 Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Z Cheng, YR Koh, H Ahmad, R Hu, J Shi, ME Liao, Y Wang, T Bai, R Li, ...
Communications Physics 3 (1), 115, 2020
73 2020 Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers M Losurdo, P Capezzuto, G Bruno, G Namkoong, WA Doolittle, AS Brown
Journal of applied physics 91 (4), 2508-2518, 2002
72 2002 Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ...
Journal of Applied Physics 117 (4), 2015
71 2015 Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap M Moseley, J Lowder, D Billingsley, WA Doolittle
Applied Physics Letters 97 (19), 2010
69 2010 Energetics of Mg incorporation at GaN(0001) and Q Sun, A Selloni, TH Myers, WA Doolittle
Physical Review B—Condensed Matter and Materials Physics 73 (15), 155337, 2006
64 2006 Substantial P‐type conductivity of AlN achieved via beryllium doping H Ahmad, J Lindemuth, Z Engel, CM Matthews, TM McCrone, ...
Advanced Materials 33 (42), 2104497, 2021
63 2021 Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells CAM Fabien, WA Doolittle
Solar Energy Materials and Solar Cells 130, 354-363, 2014
63 2014 Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle
Applied Physics Letters 103 (13), 2013
59 2013 Transient atomic behavior and surface kinetics of GaN M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle
Journal of Applied Physics 106 (1), 2009
59 2009 Oxygen adsorption and incorporation at irradiated Q Sun, A Selloni, TH Myers, WA Doolittle
Physical Review B—Condensed Matter and Materials Physics 74 (19), 195317, 2006
59 2006 Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization SD Burnham, G Namkoong, KK Lee, WA Doolittle
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
56 2007 Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ...
Journal of Crystal Growth 425, 115-118, 2015
52 2015 Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there? WA Doolittle, AG Carver, W Henderson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
52 2005 III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy G Namkoong, KK Lee, SM Madison, W Henderson, SE Ralph, ...
Applied Physics Letters 87 (17), 2005
50 2005 III-nitrides on oxygen-and zinc-face ZnO substrates G Namkoong, S Burnham, KK Lee, E Trybus, WA Doolittle, M Losurdo, ...
Applied Physics Letters 87 (18), 2005
47 2005 
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