Articles avec mandats d'accès public - Xavier JehlEn savoir plus
Non disponibles : 5
Challenges and perspectives in the modeling of spin qubits
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020
Exigences : European Commission, Agence Nationale de la Recherche
The coupled atom transistor
X Jehl, B Voisin, B Roche, E Dupont-Ferrier, S De Franceschi, M Sanquer, ...
Journal of Physics: Condensed Matter 27 (15), 154206, 2015
Exigences : European Commission
Development of spin quantum bits in SOI CMOS technology
B Bertrand, L Hutin, L Bourdet, A Corna, B Jadot, H Bohuslavskvi, ...
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-3, 2018
Exigences : European Commission
Dispersive vs charge-sensing readout for linear quantum registers
A Aprà, A Crippa, MLV Tagliaferri, J Li, R Ezzouch, B Bertrand, L Hutin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2020
Exigences : European Commission, Agence Nationale de la Recherche
From Electron Pumps to Spin Quantum Bits in Silicon
X Jehl, R Maurand, A Crippa, A Corna, YM Niquet, B Bertrand, L Hutin, ...
2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), 1-2, 2018
Exigences : European Commission
Disponibles quelque part : 36
A CMOS silicon spin qubit
R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
Exigences : European Commission
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ...
Nature communications 10 (1), 2776, 2019
Exigences : European Commission
Gate-based high fidelity spin readout in a CMOS device
M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...
Nature nanotechnology 14 (8), 737-741, 2019
Exigences : European Commission, Agence Nationale de la Recherche
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits
A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
Exigences : European Commission
Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening
H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ...
IEEE Electron Device Letters 40 (5), 784-787, 2019
Exigences : European Commission
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
Exigences : European Commission
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET
B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2016
Exigences : European Commission
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
Exigences : European Commission, Government of Italy
Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor
AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ...
Nano letters 15 (7), 4622-4627, 2015
Exigences : UK Engineering and Physical Sciences Research Council
A single hole spin with enhanced coherence in natural silicon
N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
Exigences : European Commission, Agence Nationale de la Recherche
Charge detection in an array of CMOS quantum dots
E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...
Physical Review Applied 14 (2), 024066, 2020
Exigences : Agence Nationale de la Recherche
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ...
Applied Physics Letters 109 (19), 2016
Exigences : European Commission
Towards scalable silicon quantum computing
M Vinet, L Hutin, B Bertrand, S Barraud, JM Hartmann, YJ Kim, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.5. 1-6.5. 4, 2018
Exigences : European Commission
Low-power transimpedance amplifier for cryogenic integration with quantum devices
L Le Guevel, G Billiot, B Cardoso Paz, MLV Tagliaferri, S De Franceschi, ...
Applied Physics Reviews 7 (4), 2020
Exigences : European Commission
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L Hutin, B Bertrand, E Chanrion, H Bohuslavskyi, F Ansaloni, TY Yang, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.7. 1-37.7. 4, 2019
Exigences : European Commission, Agence Nationale de la Recherche
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