A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
648 2016 Single-donor ionization energies in a nanoscale CMOS channel M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto
Nature nanotechnology 5 (2), 133-137, 2010
298 2010 Detection of doubled shot noise in short normal-metal/superconductor junctions X Jehl, M Sanquer, R Calemczuk, D Mailly
Nature 405 (6782), 50-53, 2000
244 2000 Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ...
Nature communications 10 (1), 2776, 2019
151 2019 Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...
Nature nanotechnology 14 (8), 737-741, 2019
150 2019 Electrical Spin Driving by A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
146 2018 Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ...
IEEE Electron Device Letters 40 (5), 784-787, 2019
132 2019 A two-atom electron pump B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ...
Nature Communications 4 (1), 1581, 2013
132 2013 Simple and controlled single electron transistor based on doping modulation in silicon nanowires M Hofheinz, X Jehl, M Sanquer, G Molas, M Vinet, S Deleonibus
Applied physics letters 89 (14), 2006
132 2006 Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
121 2014 Electrical Control of g -Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2016
115 2016 Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
111 2018 Coherent Coupling of Two Dopants in a Silicon Nanowire Probed<? format?> by Landau-Zener-Stückelberg Interferometry E Dupont-Ferrier, B Roche, B Voisin, X Jehl, R Wacquez, M Vinet, ...
Physical review letters 110 (13), 136802, 2013
105 2013 Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy M Hofheinz, X Jehl, M Sanquer, G Molas, M Vinet, S Deleonibus
The European Physical Journal B-Condensed Matter and Complex Systems 54, 299-307, 2006
103 2006 Andreev reflection enhanced shot noise in mesoscopic sns junctions X Jehl, P Payet-Burin, C Baraduc, R Calemczuk, M Sanquer
Physical review letters 83 (8), 1660, 1999
102 1999 Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ...
Nano letters 15 (7), 4622-4627, 2015
96 2015 Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ...
Nanotechnology 23 (21), 215204, 2012
88 2012 19.2 A 110mK 295µW 28nm FDSOI CMOS quantum integrated circuit with a 2.8 GHz excitation and nA current sensing of an on-chip double quantum dot L Le Guevel, G Billiot, X Jehl, S De Franceschi, M Zurita, Y Thonnart, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 306-308, 2020
85 2020 A single hole spin with enhanced coherence in natural silicon N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
84 2022 Hybrid metal-semiconductor electron pump for quantum metrology X Jehl, B Voisin, T Charron, P Clapera, S Ray, B Roche, M Sanquer, ...
Physical Review X 3 (2), 021012, 2013
78 2013 